参数资料
型号: MRF5S21045MR1
厂商: Freescale Semiconductor
文件页数: 13/16页
文件大小: 563K
描述: MOSFET RF N-CH 28V 10W TO270-4
标准包装: 500
晶体管类型: LDMOS
频率: 2.11GHz
增益: 14.5dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 500mA
功率 - 输出: 10W
电压 - 额定: 68V
封装/外壳: TO-270-4
供应商设备封装: TO-270 WB-4
包装: 带卷 (TR)
AR
C
HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
6
RF Device Data
Freescale Semiconductor
MRF5S21045MR1 MRF5S21045MBR1
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
1 10010
?60
?25
0.1
7th Order
TWO?TONE SPACING (MHz)
VDD
= 28 Vdc, P
out
= 45 W (PEP), I
DQ
= 500 mA
Two?Tone Measurements, Center Frequency = 2140 MHz
5th Order
3rd Order
?30
?35
?40
?45
?50
?55
IMD, INTERMODULATION DISTORTION (dBc)
Figure 8. Pulse CW Output Power versus
Input Power
40
54
P3dB = 48.17 dBm (65.6 W)
Pin, INPUT POWER (dBm)
VDD
= 28 Vdc, I
DQ
= 500 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
Center Frequency = 2140 MHz
52
46
42
30 3432 36
Actual
Ideal
P1dB = 47.60 dBm (57.5 W)
50
44
48
38
28
P
out
, OUTPUT POWER (dBm)
IM3 (dBc), ACPR (dBc)
Figure 9. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
0
Pout, OUTPUT POWER (WATTS) AVG.
40
?10
?20
30
C
ACPR
?30
?40
10
?50
1 10 100
20
TC
= ?30
C
Gps
VDD= 28 Vdc, IDQ
= 500 mA
f1 = 2135 MHz, f2 = 2145 MHz
2 x W?CDMA, 10 MHz
@ 3.84 MHz Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
100
11
17
0.1
0
60
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
13
VDD
= 28 Vdc
IDQ
= 500 mA
f = 2140 MHz
12
10
1
16
15
14
50
40
30
20
10
η
D
, DRAIN EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
, POWER GAIN (dB)
VDD
= 12 V
16 V
05010
20
30 40
60
70
80
6
16
10
8
12
14
IDQ
= 500 mA
f = 2140 MHz
C
25C
IM3
ηD
?30
85C
85C
25?30CC
85C
25
?30C
25C
85C
TC
= ?30
C
?30C
25C
85C
25C
20 V
24 V
28 V
32 V
85C
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