- 您现在的位置：买卖IC网 > Datasheet目录92 > MRF5S21045MR1 (Freescale Semiconductor)MOSFET RF N-CH 28V 10W TO270-4 Datasheet资料下载
参数资料
| 型号： | MRF5S21045MR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 9/16页 |
| 文件大小： | 563K |
| 描述： | MOSFET RF N-CH 28V 10W TO270-4 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 2.11GHz |
| 增益： | 14.5dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 500mA |
| 功率 - 输出： | 10W |
| 电压 - 额定： | 68V |
| 封装/外壳： | TO-270-4 |
| 供应商设备封装： | TO-270 WB-4 |
| 包装： | 带卷 (TR) |
AR
C
HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
2
RF Device Data
Freescale Semiconductor
MRF5S21045MR1 MRF5S21045MBR1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1C (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
= 68 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 28 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 120
μAdc)
VGS(th)
2
?
3.5
Vdc
Gate Quiescent Voltage
(VDS
= 28 Vdc, I
D
= 500 mAdc)
VGS(Q)
2
3.8
5
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 1.2 Adc)
VDS(on)
0.2
?
0.35
Vdc
Forward Transconductance
(VDS
= 10 Vdc, I
D
= 1.2 Adc)
gfs
?
3.2
?
S
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
?
0.9
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 500 mA, P
out
= 10 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
Gps
13.5
14.5
16.5
dB
Drain Efficiency
ηD
24
25.5
?
%
Intermodulation Distortion
IM3
?
-37
-35
dBc
Adjacent Channel Power Ratio
ACPR
?
-39
-37
dBc
Input Return Loss
IRL
?
-12
-9
dB
1. Part is internally matched both on input and output.
相关PDF资料 |
PDF描述 |
|---|---|
| MRF5S21045NR1 | MOSFET RF N-CH 28V 10W TO270-4 |
| MRF5S21090HSR5 | MOSFET RF N-CHAN 28V 19W NI-780S |
| MRF5S21100HSR5 | MOSFET RF N-CHAN 28V 23W NI-780S |
| MRF5S21130HSR5 | MOSFET RF N-CHAN 28V 28W NI-880S |
| MRF5S4125NR1 | MOSFET RF SGL 450MHZ TO-270-4 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S21045NBR1 | 功能描述:射频MOSFET电源晶体管 2170MHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S21045NR1 | 功能描述:射频MOSFET电源晶体管 2170MHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S21045NR1_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21090HR3 | 功能描述:射频MOSFET电源晶体管 HV5 RF PWR LDMOS NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S21090HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
发布紧急采购，3分钟左右您将得到回复。