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| 型号： | MRF5S4125NBR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/15页 |
| 文件大小： | 911K |
| 描述： | MOSFET RF SGL 450MHZ TO-272-4 |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 465MHz |
| 增益： | 23dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.1A |
| 功率 - 输出： | 25W |
| 电压 - 额定： | 65V |
| 封装/外壳： | TO-272BB |
| 供应商设备封装： | TO-272 WB-4 |
| 包装： | 带卷 (TR) |
MRF5S4125NR1 MRF5S4125NBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 500 MHz. The high gain and broadband performance of
these devices make them ideal for large--signal, common--source amplifier
applications in 28 volt base station equipment.
?
Typical Single--Carrier N--CDMA Performance @ 465 MHz: VDD
=28Volts,
IDQ
= 1100 mA, Pout
= 25 Watts Avg., IS--95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain ? 23 dB
Drain Efficiency ? 30.2%
ACPR @ 750 kHz Offset ? --47.6 dBc in 30 kHz Bandwidth
?
Capable of Handling 10:1 VSWR, @ 28 Vdc, 465 MHz, 125 Watts CW
Output Power
Features
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Qualified Up to a Maximum of 32 VDD
Operation
?
Integrated ESD Protection
?
200°C Capable Plastic Package
?
RoHS Compliant
?
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Operating Junction Temperature
(1,2)
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 90°C, 125 W CW
Case Temperature 90°C, 25 W CW
RθJC
0.33
0.43
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Document Number: MRF5S4125N
Rev. 0, 1/2007
Freescale Semiconductor
Technical Data
MRF5S4125NR1
MRF5S4125NBR1
450--480 MHz, 25 W AVG., 28 V
SINGLE N--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 1484--04, STYLE 1
T O -- 2 7 2 W B -- 4
MRF5S4125NBR1
CASE 1486--03, STYLE 1
T O -- 2 7 0 W B -- 4
MRF5S4125NR1
?
Freescale Semiconductor, Inc., 2007.
All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S4125NR1 | 功能描述:射频MOSFET电源晶体管 HV5 450MHZ RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S4140HR3 | 功能描述:射频MOSFET电源晶体管 HV5 450MHZ 140W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S4140HR5 | 功能描述:射频MOSFET电源晶体管 HV5 450MHZ 140W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S4140HSR3 | 功能描述:射频MOSFET电源晶体管 HV5 450MHZ 140W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S4140HSR5 | 功能描述:射频MOSFET电源晶体管 HV5 450MHZ 140W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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