型号: | MRF6P23190HR6 |
厂商: | FREESCALE SEMICONDUCTOR INC |
元件分类: | 功率晶体管 |
英文描述: | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
封装: | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
文件页数: | 1/11页 |
文件大小: | 431K |
代理商: | MRF6P23190HR6 |
相关PDF资料 |
PDF描述 |
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MRF6P27160HR6 | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
MRF6P3300HR3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
MRF6P9220HR3 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
MRF6S18060MR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
MRF6S18060MBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
相关代理商/技术参数 |
参数描述 |
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MRF6P24190HR5 | 功能描述:射频MOSFET电源晶体管 2.4GHZ HV6 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
MRF6P24190HR6 | 功能描述:射频MOSFET电源晶体管 2.4GHZ HV6 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
MRF6P24190HR6_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
MRF6P27160H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
MRF6P27160H_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |