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参数资料
| 型号： | MRF6P23190HR6 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件页数： | 10/11页 |
| 文件大小： | 431K |
| 代理商： | MRF6P23190HR6 |
8
RF Device Data
Freescale Semiconductor
MRF6P23190HR6
Zo = 50 Ω
Zload
Zsource
Figure 15. Series Equivalent Source and Load Impedance
f = 2300 MHz
f = 2400 MHz
f
MHz
Zsource
Ω
Zload
Ω
2300
9.31 - j12.12
7.89 - j32.78
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
VDD = 28 Vdc, IDQ = 1900 mA, Pout = 40 W Avg.
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
+
2310
9.27 - j11.93
7.61 - j32.19
2320
9.24 - j11.75
7.35 - j31.62
2330
9.21 - j11.57
7.10 - j31.06
2340
9.18 - j11.40
6.86 - j30.53
2350
9.16 - j11.23
6.64 - j30.01
2360
9.14 - j11.06
6.43 - j29.51
2370
9.13 - j10.90
6.23 - j29.02
2380
9.12 - j10.75
6.04 - j28.55
2390
9.11 - j10.59
5.86 - j28.09
2400
9.11 - j10.45
5.68 - j27.64
f = 2300 MHz
f = 2400 MHz
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6P24190HR5 | 功能描述:射频MOSFET电源晶体管 2.4GHZ HV6 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6P24190HR6 | 功能描述:射频MOSFET电源晶体管 2.4GHZ HV6 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6P24190HR6_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P27160H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P27160H_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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