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参数资料
| 型号： | MRF6P23190HR6 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件页数： | 7/11页 |
| 文件大小： | 431K |
| 代理商： | MRF6P23190HR6 |
MRF6P23190HR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
21
15
16
19
2430
2270
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ Pout = 40 Watts Avg.
2410
2390
2370
2350
2330
2310
2290
14.4
44
25
24
23
22
38
40
η
D
,DRAIN
EFFICIENCY
(%)
14.2
14
13.8
13.6
13.4
13.2
13
42
36
18
12.8
13
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
19
13
15
18
2430
2270
IRL
ACPR
IM3
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance @ Pout = 80 Watts Avg.
2410
2390
2370
2350
2330
2310
2290
14
34
35
34
32
31
28
30
32
η
D
,DRAIN
EFFICIENCY
(%)
13.8
13.6
13.4
13.2
13
12.8
12.6
26
16
12.4
12
Figure 5. Two-Tone Power Gain versus
Output Power
10
16
1
IDQ = 2850 mA
2375 mA
Pout, OUTPUT POWER (WATTS) PEP
500
G
ps
,POWER
GAIN
(dB)
15
14
12
950 mA
13
100
VDD = 28 Vdc, f1 = 2345 MHz, f2 = 2355 MHz
TwoTone Measurements, 10 MHz Tone Spacing
11
Figure 6. Third Order Intermodulation Distortion
versus Output Power
10
110
20
30
40
70
50
Pout, OUTPUT POWER (WATTS) PEP
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
VDD = 28 Vdc, f1 = 2345 MHz, f2 = 2355 MHz
TwoTone Measurements, 10 MHz Tone Spacing
100
0.5
1900 mA
1425 mA
IDQ = 950 mA
2375 mA
1900 mA
1425 mA
2850 mA
60
VDD = 28 Vdc, Pout = 40 W (Avg.), IDQ = 1900 mA
2Carrier WCDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
VDD = 28 Vdc, Pout = 80 W (Avg.), IDQ = 1900 mA
2Carrier WCDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
ηD
Gps
ηD
0.5
500
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6P24190HR5 | 功能描述:射频MOSFET电源晶体管 2.4GHZ HV6 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6P24190HR6 | 功能描述:射频MOSFET电源晶体管 2.4GHZ HV6 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6P24190HR6_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P27160H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P27160H_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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