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参数资料
| 型号： | MRF6P24190HR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 5/9页 |
| 文件大小： | 365K |
| 描述： | MOSFET RF N-CH 28V 190W NI-1230 |
| 产品变化通告： | RF Devices Discontinuation 28/Jun/2011 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 2.39GHz |
| 增益： | 14dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.9A |
| 功率 - 输出： | 40W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-1230 |
| 供应商设备封装： | NI-1230 |
| 包装： | 带卷 (TR) |
MRF6P24190HR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS ? 2450 MHz
G
ps
, POWER GAIN (dB)
500
10
10
50
Gps
Pout, OUTPUT POWER (WATTS) CW
Figure 3. Power Gain and Drain Efficiency
versus CW Output Power
IDQ
= 1900 mA
f = 2450 MHz
VDD
= 12 V
100
40
30
20
10.5
14.5
14
13
12
η
D
, DRAIN EFFICIENCY (%)
ηD
32 V
30 V
32 V
30 V
28 V
13.5
12.5
11.5
11
45
35
25
15
G
ps
, POWER GAIN (dB)
300
10
Gps
Pout, OUTPUT POWER (WATTS) CW
Figure 4. Power Gain and Drain Efficiency
versus CW Output Power
VDD
= 28 V
f = 2450 MHz
100
10.5
14.5
14
13
12
13.5
12.5
11.5
11
1500 mA
1600 mA
2100 mA
2200 mA
1900 mA
G
ps
, POWER GAIN (dB)
10
10
50
Gps
Pout, OUTPUT POWER (WATTS) CW
Figure 5. Power Gain and Drain Efficiency
versus CW Output Power
VDD
= 28 V
IDQ
= 1900 mA
f = 2450 MHz
100
40
30
20
10.5
14.5
14
13
12
η
D
, DRAIN EFFICIENCY (%)
ηD
13.5
12.5
11.5
11
45
35
25
15
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD
= 28 Vdc, P
out
= 190 W CW, and
ηD
= 46.2%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
104
110 130 150 170 190
MTTF (HOURS)
210 230
105
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6P24190HR6 | 功能描述:射频MOSFET电源晶体管 2.4GHZ HV6 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6P24190HR6_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P27160H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P27160H_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P27160H_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
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