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参数资料
| 型号： | MRF6P27160HR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 9/11页 |
| 文件大小： | 487K |
| 描述： | MOSFET RF N-CHAN 28V 35W NI-1230 |
| 标准包装： | 150 |
| 晶体管类型： | LDMOS |
| 频率： | 2.66GHz |
| 增益： | 14.6dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.8A |
| 功率 - 输出： | 35W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-1230 |
| 供应商设备封装： | NI-1230 |
| 包装： | 带卷 (TR) |
MRF6P27160HR6
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD
= 28 Vdc, P
out
= 35 W Avg., and
ηD
= 22.6%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
105
110 130 150 170 190
MTTF (HOURS)
210 230
N-CDMA TEST SIGNAL
246810
0.0001
100
0
PEAK?TO?AVERAGE (dB)
Figure 13. Single-Carrier CCDF N-CDMA
10
1
0.1
0.01
0.001
PROBABILITY (%)
IS?95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±885 kHz Offset. ALT1 Measured in 12.5 kHz
Bandwidth @ ±1.25 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
...........................................................................................
.......
..........................................................
.................................................
................................
............................................
+ACPR in 30 kHz
.......................................
Integrated BW
.....................................................................
................
..........................................................................
.....
.
+ALT1 in 12.5 kHz
..
Integrated BW
.....
..
........................................................
?80
........................................................
.............
.......................................................
?90
........................ .......................................................... .................................
..........
.........................................................................................................................
..
.
..?ALT1 in 12.5 kHz
...
Integrated BW
...
.
..
..
..
....................................
.
....................... ..............
........
..
................
....
...
......................
.
.............
..
...
.
.
...............................
..............................
.
....
..
.
.
.........
.
.........
?60
?110
?10
(dB)
?20
?30
?40
?50
?70
?100
1.2288 MHz
Channel BW
?3.6 3.62.9
0.7 2.21.5
0
?1.5
?0.7
?2.9
?2.2
f, FREQUENCY (MHz)
Figure 14. Single-Carrier N-CDMA Spectrum
?ACPR in 30 kHz
Integrated BW
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相关代理商/技术参数 |
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| MRF6P27160HR6_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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| MRF6P3300HR3 | 功能描述:MOSFET RF N-CH 32V 300W NI-860C3 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6P3300HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P3300HR5 | 功能描述:MOSFET RF N-CH 32V 300W NI-860C3 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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