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参数资料
| 型号： | MRF6S18060MR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| 封装： | PLASTIC, CASE 1486-03, 4 PIN |
| 文件页数： | 14/20页 |
| 文件大小： | 702K |
| 代理商： | MRF6S18060MR1 |
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MRF6S18060MR1 MRF6S18060MBR1
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances (In Freescale Broadband Test Fixture, 50 οhm system) VDD = 26 Vdc, IDQ = 450 mA,
Pout = 25 W Avg., 1805 MHz<Frequency<1880 MHz or 1930 MHz<Frequency<1990 MHz
Power Gain
Gps
—
15.5
—
dB
Drain Efficiency
ηD
—
32
—
%
Error Vector Magnitude
EVM
—
2
—
% rms
Spectral Regrowth at 400 kHz Offset
SR1
—
-62
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
-76
—
dBc
Typical CW Performances (In Freescale Broadband Test Fixture, 50 οhm system) VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 W,
1805 MHz<Frequency<1880 MHz or 1930 MHz<Frequency<1990 MHz
Power Gain
Gps
—
15
—
dB
Drain Efficiency
ηD
—
50
—
%
Input Return Loss
IRL
—
-12
—
dB
Pout @ 1 dB Compression Point, CW
P1dB
—
65
—
W
相关PDF资料 |
PDF描述 |
|---|---|
| MRF6S18060MBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6S18060NBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6S18060NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6S18100NBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6S18100NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S18060NBR1 | 功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S18060NR1 | 功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S18060NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S18100NBR1 | 功能描述:射频MOSFET电源晶体管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S18100NR1 | 功能描述:射频MOSFET电源晶体管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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