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参数资料
| 型号： | MRF6S18060NBR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB-4, 4 PIN |
| 文件页数： | 21/21页 |
| 文件大小： | 763K |
| 代理商： | MRF6S18060NBR1 |
MRF6S18060NR1 MRF6S18060NBR1
9
RF Device Data
Freescale Semiconductor
Z1
0.250″ x 0.083″ Microstrip
Z2*
0.320″ x 0.083″ Microstrip
Z3*
0.660″ x 0.083″ Microstrip
Z4*
0.535″ x 0.083″ Microstrip
Z5
0.365″ x 1.000″ Microstrip
Z6
0.860″ x 0.080″ Microstrip
Z7, Z8
0.115″ x 1.000″ Microstrip
Z9
0.485″ x 1.000″ Microstrip
Z10*
0.420″ x 0.083″ Microstrip
Z11*
0.230″ x 0.083″ Microstrip
Z12*
0.745″ x 0.083″ Microstrip
Z13
0.250″ x 0.083″ Microstrip
Z14
0.640″ x 0.080″ Microstrip
PCB
Taconic TLX8-0300, 0.030″, εr = 2.55
* Variable for tuning
Figure 16. MRF6S18060NR1(NBR1) Test Circuit Schematic — 1800 MHz
VBIAS
RF
INPUT
RF
OUTPUT
Z1
C3
C4
Z3
DUT
Z9
Z10
Z11
C1
R3
C12
C10
+
Z2
R1
C11
VSUPPLY
R2
C5
C7
Z8
C2
Z4
Z5
Z7
Z6
Z13
Z14
C8
C6
C9
Z12
Table 7. MRF6S18060NR1(NBR1) Test Circuit Component Designations and Values — 1800 MHz
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4
6.8 pF Chip Capacitors
ATC100B6R8CT500XT
ATC
C5
0.8 pF Chip Capacitor
ATC100B0R8BT500XT
ATC
C6, C9
0.5 pF Chip Capacitors
ATC100B0R5BT500XT
ATC
C7
2.2 pF Chip Capacitor
ATC100B2R2BT500XT
ATC
C8
1.5 pF Chip Capacitor
ATC100B1R5BT500XT
ATC
C10, C11
10 μF Chip Capacitors
C5750X5R1H106MT
TDK
C12
220 μF, 63 V Electrolytic Capacitor, Radial
2222-136-68221
Vishay
R1, R2
10 kW, 1/4 W Chip Resistors
CRCW12061002FKEA
Vishay
R3
10 W, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
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PDF描述 |
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| MRF6S18060NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
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| MRF6S18100NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S18060NR1 | 功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S18060NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S18100NBR1 | 功能描述:射频MOSFET电源晶体管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S18100NR1 | 功能描述:射频MOSFET电源晶体管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S18100NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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