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参数资料
| 型号： | MRF6S18060NBR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB-4, 4 PIN |
| 文件页数： | 3/21页 |
| 文件大小： | 763K |
| 代理商： | MRF6S18060NBR1 |
MRF6S18060NR1 MRF6S18060NBR1
11
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 1800 MHz
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
f, FREQUENCY (MHz)
12
47
Gps
VDD = 26 Vdc
IDQ = 600 mA
17
57
55
53
51
49
1920
IRL
Figure 18. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 60 Watts
16
0
4
8
12
20
η
D
,DRAIN
EFFICIENCY
(%)
16
15
14
13
ηD
1780
1800
1820
1840
1860
1880
1900
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
f, FREQUENCY (MHz)
12
1760
33
Gps
VDD = 26 Vdc
IDQ = 600 mA
17
43
41
39
37
35
1920
IRL
Figure 19. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 30 Watts
16
0
4
8
12
20
η
D
,DRAIN
EFFICIENCY
(%)
16
15
14
13
ηD
1780
1800
1820
1840
1860
1880
1900
Figure 20. EVM versus Frequency
f, FREQUENCY (MHz)
Pout = 35 W Avg.
25 W Avg.
15 W Avg.
VDD = 26 Vdc
IDQ = 450 mA
EVM,
ERROR
VECT
OR
MAGNITUDE
(%
rms)
1920
0.5
4.5
1780
3
2.5
1.5
1860
1840
1820
1800
3.5
2
1880
4
1
1900
Figure 21. EVM and Drain Efficiency versus
Output Power
Pout, OUTPUT POWER (WATTS) AVG.
100
4
10
VDD = 26 Vdc
IDQ = 450 mA
f = 1860 MHz
EDGE Modulation
8
6
0
10
1
2
20
50
40
30
0
10
TC = 25_C
ηD
η
D
,DRAIN
EFFICIENCY
(%)
EVM,
ERROR
VECT
OR
MAGNITUDE
(%
rms)
EVM
相关PDF资料 |
PDF描述 |
|---|---|
| MRF6S18060NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6S18100NBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6S18100NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6S18140HR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S18060NR1 | 功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S18060NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S18100NBR1 | 功能描述:射频MOSFET电源晶体管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S18100NR1 | 功能描述:射频MOSFET电源晶体管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S18100NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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