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参数资料
| 型号： | MRF6S18060NBR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB-4, 4 PIN |
| 文件页数： | 4/21页 |
| 文件大小： | 763K |
| 代理商： | MRF6S18060NBR1 |
12
RF Device Data
Freescale Semiconductor
MRF6S18060NR1 MRF6S18060NBR1
TYPICAL CHARACTERISTICS — 1800 MHz
50
60
65
70
75
1780
80
Figure 22. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
SPECTRAL
REGROWTH
@
400
kHz
AND
600
kHz
(dBc)
1800
1820
1840
1860
Pout = 35 W Avg.
25 W Avg.
15 W Avg.
35 W Avg.
25 W Avg.
10 W Avg.
SR @ 400 kHz
SR @ 600 kHz
55
1880
1900
1920
TC = 25_C
75
45
0
Pout, OUTPUT POWER (WATTS) AVG.
50
55
60
65
70
10
Figure 23. Spectral Regrowth at 400 kHz
versus Output Power
SPECTRAL
REGROWTH
@
400
kHz
(dBc)
20
30
40
50
60
TC = 25_C
85
60
0
Pout, OUTPUT POWER (WATTS) AVG.
70
75
80
10
Figure 24. Spectral Regrowth at 600 kHz
versus Output Power
SPECTRAL
REGROWTH
@
600
kHz
(dBc)
20
30
40
50
60
65
f, FREQUENCY (MHz)
VDD = 26 Vdc
IDQ = 450 mA
EDGE Modulation
VDD = 26 Vdc
IDQ = 450 mA
f = 1960 MHz
EDGE Modulation
VDD = 26 Vdc
IDQ = 450 mA
f = 1960 MHz
EDGE Modulation
相关PDF资料 |
PDF描述 |
|---|---|
| MRF6S18060NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6S18100NBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6S18100NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6S18140HR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S18060NR1 | 功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S18060NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S18100NBR1 | 功能描述:射频MOSFET电源晶体管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S18100NR1 | 功能描述:射频MOSFET电源晶体管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S18100NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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