参数资料
型号: MRF6S18140HSR5
厂商: Freescale Semiconductor
文件页数: 5/12页
文件大小: 435K
描述: MOSFET RF N-CH 28V ESD NI880S
标准包装: 50
晶体管类型: LDMOS
频率: 1.88GHz
增益: 16dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 1.2A
功率 - 输出: 29W
电压 - 额定: 68V
封装/外壳: NI-880S
供应商设备封装: NI-880S
包装: 带卷 (TR)
AR
C
HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
2
RF Device Data
Freescale Semiconductor
MRF6S18140HR3 MRF6S18140HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
2 (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
= 68
Vdc, VGS
= 0 Vdc)
IDSS
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 28
Vdc, VGS
= 0 Vdc)
IDSS
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 300
μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDD
= 28 Vdc, I
D
= 1200
mAdc, Measured in Functional Test)
VGS(Q)
2
2.7
3.8
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 3 Adc)
VDS(on)
0.1
0.22
0.3
Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
2.2
pF
Output Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Coss
685
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1200 mA, P
out
= 29 W Avg., f1 = 1877.5 MHz, f2 =
1880 MHz, 2-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz
Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
15
16
18
dB
Drain Efficiency
ηD
25.5
27.5
%
Intermodulation Distortion
IM3
-36
-34.5
dBc
Adjacent Channel Power Ratio
ACPR
-50.5
-48
dBc
Input Return Loss
IRL
-10.5
dB
Part internally matched both on input and output.
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