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| 型号： | MRF6S19120HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/11页 |
| 文件大小： | 757K |
| 描述： | MOSFET RF N-CHAN 28V 19W NI-780S |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 1.99GHz |
| 增益： | 15dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1A |
| 功率 - 输出： | 19W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-780S |
| 供应商设备封装： | NI-780S |
| 包装： | 带卷 (TR) |
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MRF6S19120HR3 MRF6S19120HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for N--CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio and WLL
applications.
?
Typical Single--Carrier N--CDMA Performance: VDD
=28Volts,IDQ
=
1000 mA, Pout
= 19 Watts Avg., f = 1990 MHz, IS--95 CDMA (Pilot, Sync,
Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain ? 15 dB
Drain Efficiency ? 21.5%
ACPR @ 885 kHz Offset ? --54 dBc in 30 kHz Bandwidth
?
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW
Output Power
Features
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Qualified Up to a Maximum of 32 VDD
Operation
?
Integrated ESD Protection
?
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +68
Vdc
Gate--Source Voltage
VGS
--0.5, +12
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 120 W CW
Case Temperature 73°C, 19 W CW
RθJC
0.43
0.45
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF6S19120H
Rev. 2, 12/2008
Freescale Semiconductor
Technical Data
MRF6S19120HR3
MRF6S19120HSR3
1930--1990 MHz, 19 W AVG., 28 V
SINGLE N--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465A--06, STYLE 1
NI--780S
MRF6S19120HSR3
CASE 465--06, STYLE 1
NI--780
MRF6S19120HR3
?
Freescale Semiconductor, Inc., 2005--2006, 2008, 2010.
All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S19140HR3 | 功能描述:射频MOSFET电源晶体管 HV6 28V 29W LDMOS NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19140HR3_07 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S19140HR5 | 功能描述:射频MOSFET电源晶体管 HV6 28V 29W LDMOS NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19140HS | 制造商:Freescale Semiconductor 功能描述: |
| MRF6S19140HSR3 | 功能描述:射频MOSFET电源晶体管 HV6 28V29W LDMOS NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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