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| 型号： | MRF6S20010GNR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/28页 |
| 文件大小： | 874K |
| 描述： | MOSFT RF N-CH 28V 10W TO270-2 GW |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS |
| 频率： | 2.17GHz |
| 增益： | 15.5dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 130mA |
| 功率 - 输出： | 10W |
| 电压 - 额定： | 68V |
| 封装/外壳： | TO-270BB |
| 供应商设备封装： | TO-270 WB-4 鸥翼形 |
| 包装： | 标准包装 |
| 其它名称： | MRF6S20010GNR1DKR |
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1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for Class A or Class AB general purpose applications with
frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation
and multipurpose amplifier applications.
?
Typical Two--Tone Performance @ 2170 MHz: VDD
=28Volts,IDQ
=
130 mA, Pout
= 10 Watts PEP
Power Gain — 15.5 dB
Drain Efficiency — 36%
IMD — --34 dBc
?
Typical 2--Carrier W--CDMA Performance: VDD
=28Volts,IDQ
= 130 mA,
Pout
= 1 Watt Avg., Full Frequency Band (2130--2170 MHz), Channel
Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability
Power Gain — 15.5 dB
Drain Efficiency — 15%
IM3 @ 10 MHz Offset — --47 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --49 dBc in 3.84 MHz Channel Bandwidth
?
Typical Single--Carrier N--CDMA Performance: VDD
=28Volts,IDQ
=
130 mA, Pout
= 1 Watt Avg., Full Frequency Band (1930--1990 MHz),
IS--95 (Pilot, Sync, Paging, Traffic Codes 8 through 13), Channel
Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
Drain Efficiency — 16%
ACPR @ 885 kHz Offset = --60 dBc in 30 kHz Bandwidth
?
Typical GSM EDGE Performance: VDD
=28Volts,IDQ
= 130 mA, Pout
=
4 Watts Avg., Full Frequency Band (1805--1880 MHz)
Power Gain — 16 dB
Drain Efficiency — 33%
EVM — 1.3% rms
?
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 Watts CW
Output Power
Features
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Qualified Up to a Maximum of 32 VDD
Operation
?
Integrated ESD Protection
?
225?C Capable Plastic Package
?
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +68
Vdc
Gate--Source Voltage
VGS
--0.5, +12
Vdc
Storage Temperature Range
Tstg
--65 to +150
?C
Case Operating Temperature
TC
150
?C
Operating Junction Temperature
(1,2)
TJ
225
?C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
Document Number: MRF6S20010N
Rev. 4, 1/2014
Freescale Semiconductor
Technical Data
1600--2200 MHz, 10 W, 28 V
GSM, GSM EDGE
SINGLE N--CDMA
2xW--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF6S20010NR1
MRF6S20010GNR1
T O -- 2 7 0 -- 2
PLASTIC
MRF6S20010NR1
TO--270G--2
PLASTIC
MRF6S20010GNR1
(Top View)
GS
21RFout/VDS
Figure 1. Pin Connections
Note: The backside of the package is the
source terminal for the transistor.
RFin/V
?
Freescale Semiconductor, Inc., 2005--2006, 2008--2009, 2014. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S20010GNR1-CUT TAPE | 制造商:Freescale 功能描述:MRF6S20010 Series 1.6 to 2.2 GHz 28 V 10 W RF Power N-Ch Mosfet - TO-270 |
| MRF6S20010NR1 | 功能描述:射频MOSFET电源晶体管 HV6 2GHZ 10W TO270-2 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S20010NR1_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S21050LR3 | 功能描述:射频MOSFET电源晶体管 HV6 W-CDMA 11.5W NI400L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S21050LR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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