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| 型号： | MRF6S19120HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 2/11页 |
| 文件大小： | 757K |
| 描述： | MOSFET RF N-CHAN 28V 19W NI-780S |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 1.99GHz |
| 增益： | 15dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1A |
| 功率 - 输出： | 19W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-780S |
| 供应商设备封装： | NI-780S |
| 包装： | 带卷 (TR) |
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RF Device Data
Freescale Semiconductor
MRF6S19120HR3 MRF6S19120HSR3
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
2
Dec. 2008
?
Changed ?Full Frequency Band? to ?f = 1990 MHz? to match functional tests, p. 1
?
Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
?
Removed Total Device Dissipation from Max Ratings table as data was redundant
(information already
provided in Thermal Characteristics table), p. 1
?
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
?Continuous use at maximum temperature will affect MTTF? footnote added, p. 1
?
Corrected VDS
to VDD
in the RF test condition voltage callout for VGS(Q), and added ?Measured in
Functional Test?, On Characteristics table, p. 2
?
Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
?
Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
?
Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
?
Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
?
Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2
and listed
operating characteristics and location
of MTTF calculator for device, p. 7
?
Updated ALT1 Bandwidth and Offset in Fig. 13, Single--Carrier CCDF N--CDMA, p. 7
?
Updated --ALT1 and +ALT1 Bandwidths in Fig. 14, Single--Carrier N--CDMA Spectrum, p. 7
?
Added Product Documentation and Revision History, p. 10
Dec. 2010
?
Data sheet archived. Parts no longer manufactured.
相关PDF资料 |
PDF描述 |
|---|---|
| MRF6S19140HSR5 | MOSFET RF N-CHAN 28V 29W NI-880S |
| MRF6S19200HSR5 | MOSFET RF N-CH 56W 28V NI780S |
| MRF6S20010GNR1 | MOSFT RF N-CH 28V 10W TO270-2 GW |
| MRF6S21050LSR5 | MOSFET RF N-CH 28V 11.5W NI-400S |
| MRF6S21060NR1 | MOSFET RF N-CH 28V 14W TO270-4 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S19140HR3 | 功能描述:射频MOSFET电源晶体管 HV6 28V 29W LDMOS NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19140HR3_07 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S19140HR5 | 功能描述:射频MOSFET电源晶体管 HV6 28V 29W LDMOS NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19140HS | 制造商:Freescale Semiconductor 功能描述: |
| MRF6S19140HSR3 | 功能描述:射频MOSFET电源晶体管 HV6 28V29W LDMOS NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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