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| 型号： | MRF6S19120HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 4/11页 |
| 文件大小： | 757K |
| 描述： | MOSFET RF N-CHAN 28V 19W NI-780S |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 1.99GHz |
| 增益： | 15dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1A |
| 功率 - 输出： | 19W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-780S |
| 供应商设备封装： | NI-780S |
| 包装： | 带卷 (TR) |
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RCHIVE INFORMATION
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RF Device Data
Freescale Semiconductor
MRF6S19120HR3 MRF6S19120HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1A (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics
(TC
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
=68Vdc,VGS
=0Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
=28Vdc,VGS
=0Vdc)
IDSS
?
?
1
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 270
μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDD
=28Vdc,ID
= 1000 mAdc Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=2.7Adc)
VDS(on)
?
0.21
0.3
Vdc
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(VDS
=28Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
?
1.95
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 1000 mA, Pout
= 19 W Avg. N--CDMA, f = 1990 MHz,
Single--Carrier N--CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @
±885 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
14
15
17
dB
Drain Efficiency
ηD
20
21.5
?
%
Adjacent Channel Power Ratio
ACPR
?
-- 5 4
-- 4 8
dBc
Input Return Loss
IRL
?
-- 1 3
-- 9
dB
1. Part is internally matched both on input and output.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S19140HR3 | 功能描述:射频MOSFET电源晶体管 HV6 28V 29W LDMOS NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19140HR3_07 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S19140HR5 | 功能描述:射频MOSFET电源晶体管 HV6 28V 29W LDMOS NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19140HS | 制造商:Freescale Semiconductor 功能描述: |
| MRF6S19140HSR3 | 功能描述:射频MOSFET电源晶体管 HV6 28V29W LDMOS NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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