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| 型号： | MRF6S19120HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 9/11页 |
| 文件大小： | 757K |
| 描述： | MOSFET RF N-CHAN 28V 19W NI-780S |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 1.99GHz |
| 增益： | 15dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1A |
| 功率 - 输出： | 19W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-780S |
| 供应商设备封装： | NI-780S |
| 包装： | 带卷 (TR) |
AR
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HIVE INF
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RMATI
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A
RCHIVE INFORMATION
MRF6S19120HR3 MRF6S19120HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 12. MTTF Factor versus Junction Temperature
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD
=28Vdc,Pout
= 19 W Avg., and
ηD
= 21.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
105
110 130 150 170 190
MTTF (HOURS)
210 230
N--CDMA TEST SIGNAL
Figure 13. Single--Carrier CCDF N--CDMA
Figure 14. Single--Carrier N--CDMA Spectrum
246810
0.0001
100
0
PEAK--TO--AVERAGE (dB)
10
1
0.1
0.01
0.001
IS--95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±885 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @
±1.98
MHz Offset. PAR = 9.8 dB @
0.01% Probability on
CCDF.
PROBABILITY (%)
...........................................................................................
.......
.........................................................
...................................................
................................
...........................................
+ACPRin30kHz
.........................................................
........Integrated BW
...........................................................
..........................................................................
....
....
.....
+ALT1in30kHz.
..........
Integrated BW..
.............................................
-- 8 0
........................................................
.............
............................................................. .......................
................................................................
-- 9 0
.....................
.
..............................................................
.......
..............................................................
....
.
...
...
.
..
..-- A LT 1 i n 3 0 k H z
Integrated BW
.
.........................
..
..........
..... ........
......
.............................
...........
....................
.......
.....................
....
..
.....
.
...............
....
.......
..............................
....
..
.......
....
..........
.
-- 6 0
-- 11 0
-- 1 0
(dB)
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 7 0
--100
1.2288 MHz
Channel BW
-- 3 . 6 3 . 62.9
0.7 2.21.5
0
-- 0 . 7
-- 1 . 5
-- 2 . 9
-- 2 . 2
f, FREQUENCY (MHz)
--ACPR in 30 kHz
Integrated BW
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| MRF6S19140HSR5 | MOSFET RF N-CHAN 28V 29W NI-880S |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S19140HR3 | 功能描述:射频MOSFET电源晶体管 HV6 28V 29W LDMOS NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19140HR3_07 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S19140HR5 | 功能描述:射频MOSFET电源晶体管 HV6 28V 29W LDMOS NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19140HS | 制造商:Freescale Semiconductor 功能描述: |
| MRF6S19140HSR3 | 功能描述:射频MOSFET电源晶体管 HV6 28V29W LDMOS NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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