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参数资料
| 型号： | MRF6S19100NR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 1486-03, 4 PIN |
| 文件页数： | 13/16页 |
| 文件大小： | 606K |
| 代理商： | MRF6S19100NR1 |
6
RF Device Data
Freescale Semiconductor
MRF6S19100NR1 MRF6S19100NBR1
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
60
10
0.1
7th Order
TWOTONE SPACING (MHz)
VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 950 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
5th Order
3rd Order
20
30
40
50
1
100
Figure 8. Pulsed CW Output Power versus
Input Power
Figure 9. 2-Carrier N-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
0
70
Pout, OUTPUT POWER (WATTS) AVG.
50
20
40
30
40
50
10
60
1
10
100
20
42
59
Pin, INPUT POWER (dBm)
45
32
34
36
57
55
51
53
49
38
40
30
100
18
1
0
70
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 Vdc
IDQ = 950 mA
f = 1960 MHz
10
16
15
14
13
12
11
60
50
40
30
20
10
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
VDD = 24 V
IM3
Gps
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
IM3
(dBc),
ACPR
(dBc)
η
D
,DRAIN
EFFICIENCY
(%)
Gps
ηD
G
ps
,POWER
GAIN
(dB)
200
10
16
050
13
12
11
100
150
15
14
28 V
IDQ = 950 mA
f = 1960 MHz
P
out
,OUTPUT
POWER
(dBm)
G
ps
,POWER
GAIN
(dB)
47
ηD
300
32 V
VDD = 28 Vdc, IDQ = 950 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 1960 MHz
Actual
Ideal
P3dB = 52.156 dBm (164.29 W)
ACPR
TC = 85_C
25
_C
85
_C
30
_C
30
_C
30
_C
85
_C
25
_C
TC = 30_C
85
_C
17
30
_C
25
_C
P1dB = 51.13 dBm (129.72 W)
VDD = 28 Vdc, IDQ = 950 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2Carrier NCDMA, 2.5 MHz Carrier
Spacing, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
200
25
_C
85
_C
相关PDF资料 |
PDF描述 |
|---|---|
| MRF6S19100NBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
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| MRF6S19120HR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S19120H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S19120HR3 | 功能描述:射频MOSFET电源晶体管 HV6 19W N-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19120HR5 | 功能描述:射频MOSFET电源晶体管 HV6 19W N-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19120HSR3 | 功能描述:射频MOSFET电源晶体管 HV6 19W N-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19120HSR5 | 功能描述:射频MOSFET电源晶体管 HV6 19W N-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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