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参数资料
| 型号： | MRF6S19100NBR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 1484-04, 4 PIN |
| 文件页数： | 1/16页 |
| 文件大小： | 606K |
| 代理商： | MRF6S19100NBR1 |
MRF6S19100NR1 MRF6S19100NBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for N-CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 950 mA,
Pout = 22 Watts Avg., f = 1987 MHz, IS-95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 25.5%
IM3 @ 2.5 MHz Offset — -37 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — -51 dBc in 30 kHz Bandwidth
Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Output Power
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
N Suffix Indicates Lead-Free Terminations
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 75°C, 23 W CW
RθJC
0.61
0.65
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF6S19100N
Rev. 2, 12/2008
Freescale Semiconductor
Technical Data
MRF6S19100NR1
MRF6S19100NBR1
1930 -1990 MHz, 22 W AVG., 28 V
2 x N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 1486-03, STYLE 1
TO-270 WB-4
PLASTIC
MRF6S19100NR1
CASE 1484-04, STYLE 1
TO-272 WB-4
PLASTIC
MRF6S19100NBR1
Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S19100NR1 | 功能描述:射频MOSFET电源晶体管 1990MHZ 22W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19120H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S19120HR3 | 功能描述:射频MOSFET电源晶体管 HV6 19W N-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19120HR5 | 功能描述:射频MOSFET电源晶体管 HV6 19W N-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19120HSR3 | 功能描述:射频MOSFET电源晶体管 HV6 19W N-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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