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参数资料
| 型号： | MRF6S19100NBR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 1484-04, 4 PIN |
| 文件页数： | 10/16页 |
| 文件大小： | 606K |
| 代理商： | MRF6S19100NBR1 |
MRF6S19100NR1 MRF6S19100NBR1
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6S19100NR1(NBR1) Test Circuit Schematic
Z7
0.319″ x 0.880″ Microstrip
Z8
0.355″ x 0.215″ Microstrip
Z9
0.661″ x 0.084″ Microstrip
Z11, Z12
1.328″ x 0.120″ Microstrip
PCB
Arlon CuClad 250GX-0300-55-22, 0.030″, εr = 2.55
Z1, Z10
0.743″ x 0.084″ Microstrip
Z2
0.818″ x 0.084″ Microstrip
Z3
0.165″ x 0.386″ Microstrip
Z4
0.505″ x 0.800″ Microstrip
Z5
0.323″ x 0.040″ Microstrip
Z6
0.160″ x 0.880″ Microstrip
VBIAS
VSUPPLY
RF
OUTPUT
RF
INPUT
DUT
C1
C2
C3
C4
C5
C6
R1
Z1
Z2
Z3
C7
Z7
C8
Z8
Z6
R2
Z5
R3
Z4
Z9
Z10
Z12
Z11
VSUPPLY
C9
C10
C11
+
Table 6. MRF6S19100NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
10 μF, 35 V Tantalum Capacitor
T491D106K035AT
Kemet
C2
100 nF Chip Capacitor
C12065C104KAT
ATC
C3, C7
5.1 pF Chip Capacitors
ATC100B5R1BT500XT
ATC
C4, C8, C9
9.1 pF Chip Capacitors
ATC100B9R1BT500XT
ATC
C5, C6, C10, C11
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
R1
1 kΩ, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
10 kΩ, 1/4 W Chip Resistor
CRCW12061002FKEA
Vishay
R3
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S19100NR1 | 功能描述:射频MOSFET电源晶体管 1990MHZ 22W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19120H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S19120HR3 | 功能描述:射频MOSFET电源晶体管 HV6 19W N-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19120HR5 | 功能描述:射频MOSFET电源晶体管 HV6 19W N-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19120HSR3 | 功能描述:射频MOSFET电源晶体管 HV6 19W N-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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