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参数资料
| 型号： | MRF6S19100NBR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 1484-04, 4 PIN |
| 文件页数： | 12/16页 |
| 文件大小： | 606K |
| 代理商： | MRF6S19100NBR1 |
MRF6S19100NR1 MRF6S19100NBR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
2000
1900
IRL
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance @ Pout = 22 Watts Avg.
12
28
VDD = 28 Vdc, Pout = 22 W (Avg.), IDQ = 950 mA
2Carrier NCDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
1970
1950
1930
15.8
60
27
26.5
26
30
36
42
48
η
D
,DRAIN
EFFICIENCY
(%)
ηD
G
ps
,POWER
GAIN
(dB)
1920
1940
1960
1980 1990
54
16
20
24
36
1910
25.5
25
32
15.7
15.6
15.4
15.5
15.3
15.1
15.2
15
14.9
14.8
Gps
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
2000
1900
IRL
ACPR
IM3
f, FREQUENCY (MHz)
Figure 4. 2-Carrier N-CDMA Broadband Performance @ Pout = 40 Watts Avg.
10
30
VDD = 28 Vdc, Pout = 40 W (Avg.)
IDQ = 950 mA, 2Carrier NCDMA
1970
1950
1930
15.4
50
36
35.5
25
30
35
40
η
D
,DRAIN
EFFICIENCY
(%)
ηD
G
ps
,POWER
GAIN
(dB)
1920
1940
1960
1980 1990
45
15
20
25
40
1910
35
34.5
35
15.3
15.2
15
15.1
14.9
14.7
14.8
14.6
14.5
14.4
Gps
Figure 5. Two-Tone Power Gain versus
Output Power
100
11
17
1
IDQ = 1425 mA
1190 mA
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
TwoTone Measurements, 2.5 MHz Tone Spacing
950 mA
16
15
13
10
300
Pout, OUTPUT POWER (WATTS) PEP
G
ps
,POWER
GAIN
(dB)
14
710 mA
Figure 6. Third Order Intermodulation Distortion
versus Output Power
10
1
100
20
30
40
300
60
50
10
Pout, OUTPUT POWER (WATTS) PEP
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
IDQ = 475 mA
1425 mA
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
TwoTone Measurements, 2.5 MHz Tone Spacing
950 mA
710 mA
475 mA
12
1190 mA
34
2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S19100NR1 | 功能描述:射频MOSFET电源晶体管 1990MHZ 22W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19120H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S19120HR3 | 功能描述:射频MOSFET电源晶体管 HV6 19W N-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19120HR5 | 功能描述:射频MOSFET电源晶体管 HV6 19W N-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19120HSR3 | 功能描述:射频MOSFET电源晶体管 HV6 19W N-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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