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参数资料
| 型号： | MRF6S19120HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件页数： | 5/11页 |
| 文件大小： | 456K |
| 代理商： | MRF6S19120HR3 |
MRF6S19120HR3 MRF6S19120HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6S19120HR3(SR3) Test Circuit Schematic
Z7
0.387″ x 1.098″ Microstrip
Z8
0.169″ x 0.316″ Microstrip
Z9
0.781″ x 0.084″ Microstrip
Z10
1.228″ x 0.084″ Microstrip
PCB
Arlon CuClad 250GX-0300-55-22, 0.030″, εr = 2.55
Z1
1.242″ x 0.084″ Microstrip
Z2
0.839″ x 0.084″ Microstrip
Z3
0.230″ x 0.180″ Microstrip
Z4
0.320″ x 1.100″ Microstrip
Z5
0.093″ x 1.100″ Microstrip
Z6
0.160″ x 1.098″ Microstrip
RF
INPUT
C9
R1
VBIAS
R2
+
B1
C5
C7
C3
Z1
C1
Z2
Z3
Z4
Z5
DUT
Z6
C4
Z7
C6
C8
C10
+
C11
+
C12
+
C13
+
C14
+
VSUPPLY
Z8
Z9
C2
Z10
RF
OUTPUT
Table 5. MRF6S19120HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Short RF Bead
2743019447
Fair-Rite
C1, C2
10 pF Chip Capacitors
ATC100B100JT500XT
ATC
C3, C4
5.1 pF Chip Capacitors
ATC100B5R1CT500XT
ATC
C5, C6
1.0 nF Chip Capacitors
ATC100B102JT500XT
ATC
C7, C8
0.1 μF Chip Capacitors
C1825C100J5RAC
Kemet
C9
10 μF, 35 V Tantalum Chip Capacitor
T491X106K035AT
Kemet
C10, C11
10 μF, 35 V Tantalum Chip Capacitors
GRM55DR61H106KA88L
Murata
C12, C13
22 μF, 50 V Tantalum Chip Capacitors
T491C105K022AT
Kemet
C14
470 μF, 63 V Electrolytic Capacitor, Radial
EMVY630GTR471MLN0S
Nippon Chemi-Con
R1
560 KW, 1/4 W Chip Resistor
CRCW12065603FKEA
Vishay
R2
10 W, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
LIFETIME
BUY
LAST
ORDER
4
APR
09
LAST
SHIP
3
OCT
09
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S19120HR5 | 功能描述:射频MOSFET电源晶体管 HV6 19W N-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19120HSR3 | 功能描述:射频MOSFET电源晶体管 HV6 19W N-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19120HSR5 | 功能描述:射频MOSFET电源晶体管 HV6 19W N-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19140HR3 | 功能描述:射频MOSFET电源晶体管 HV6 28V 29W LDMOS NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19140HR3_07 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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