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参数资料
| 型号： | MRF6S19120HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件页数： | 8/11页 |
| 文件大小： | 456K |
| 代理商： | MRF6S19120HR3 |
6
RF Device Data
Freescale Semiconductor
MRF6S19120HR3 MRF6S19120HSR3
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
60
0
0.1
7th Order
TWOTONE SPACING (MHz)
VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 1000 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 1990 MHz
5th Order
3rd Order
10
20
30
40
50
1
100
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
Figure 8. Pulsed CW Output Power versus
Input Power
46
63
P3dB = 52.64 dBm (183.69 W)
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 1000 mA
Pulsed CW, 12
μsec(on), 1% Duty Cycle
f = 1990 MHz
62
52
47
33
35
34
36
Actual
Ideal
P1dB = 51.9 dBm (154.32 W)
57
50
56
37
32
P
out
,OUTPUT
POWER
(dBm)
ACPR
(dBc),
AL
T1
(dBc)
Figure 9. Single-Carrier N-CDMA ACPR, ALT1, Power Gain
and Drain Efficiency versus Output Power
10
Pout, OUTPUT POWER (WATTS) AVG.
40
20
30
40
50
10
60
1
10
150
20
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
100
11
18
1
0
70
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 Vdc
IDQ = 1000 mA
f = 1990 MHz
10
16
15
14
13
12
50
40
30
20
10
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
TC = 25_C
25
_C
ηD
30
_C
85
_C
ACPR
Gps
85
_C
TC = 30_C
30
_C
25
_C
85
_C
25
_C
85
_C
61
60
59
58
55
54
53
51
49
48
38 39 40 41
42 43
44 45
ALT1
50
0
100
70
80
25
_C
VDD = 28 Vdc, IDQ = 1000 mA
f = 1990 MHz, SingleCarrier NCDMA
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01%
Probability (CCDF)
30
_C
25
_C
17
60
ηD
Gps
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
,POWER
GAIN
(dB)
VDD = 32 V
200
6
16
0
150
50
10
8
100
12
14
IDQ = 1000 mA
f = 1990 MHz
24 V
28 V
15
13
11
9
7
LIFETIME
BUY
LAST
ORDER
4
APR
09
LAST
SHIP
3
OCT
09
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相关代理商/技术参数 |
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|---|---|
| MRF6S19120HR5 | 功能描述:射频MOSFET电源晶体管 HV6 19W N-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19120HSR3 | 功能描述:射频MOSFET电源晶体管 HV6 19W N-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19120HSR5 | 功能描述:射频MOSFET电源晶体管 HV6 19W N-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19140HR3 | 功能描述:射频MOSFET电源晶体管 HV6 28V 29W LDMOS NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19140HR3_07 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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