参数资料
型号: MRF6S19140HSR5
厂商: Freescale Semiconductor
文件页数: 5/11页
文件大小: 405K
描述: MOSFET RF N-CHAN 28V 29W NI-880S
标准包装: 50
晶体管类型: LDMOS
频率: 1.93GHz
增益: 16dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 1.15A
功率 - 输出: 29W
电压 - 额定: 68V
封装/外壳: NI-880S
供应商设备封装: NI-880S
包装: 带卷 (TR)
MRF6S19140HR3 MRF6S19140HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6S19140HR3(HSR3) Test Circuit Schematic
Z7 0.115″
x 0.569
Microstrip
Z8 0.191″
x 0.289
Microstrip
Z9 0.681″
x 0.081
Microstrip
Z10 1.140″
x 0.081
Microstrip
PCB Arlon GX0300-55-22, 0.030″, εr
= 2.5
Z1 0.864″
x 0.082
Microstrip
Z2 1.373″
x 0.082
Microstrip
Z3 0.282″
x 0.900
Microstrip
Z4 0.103″
x 0.900
Microstrip
Z5 0.094″
x 1.055
Microstrip
Z6 0.399″
x 1.055
Microstrip
RF
INPUT
RF
OUTPUT
C7
DUT
Z1
C1
R3
R1
VBIAS
R5
B1
C13
+
C3
Z2
Z3
VBIAS
C8
R4
R2
R6
B2
C14
+
C4
Z4
Z5
Z6
Z7
C5
C9
C11
C15
+
VSUPPLY
Z8
Z9
C2
Z10
VSUPPLY
C6
C10
C12
Table 5. MRF6S19140HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Beads, Surface Mount
2743019447
Fair-Rite
C1, C2
39 pF Chip Capacitors
ATC100B390JT500XT
ATC
C3, C4, C5, C6
9.1 pF Chip Capacitors
ATC100B9R1CT500XT
ATC
C7, C8, C9, C10, C11, C12
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C13, C14
47 μF, 50 V Electrolytic Capacitors
EMVY500ADA470MF80G
Nippon
C15
470 μF, 63 V Electrolytic Capacitor
ESMG630ELL471MK205
United Chemi-Con
R1, R2
560 kΩ, 1/4 W Chip Resistors
CRCW12065600FKTA
Vishay
R3, R4
1.0 kΩ, 1/4 W Chip Resistors
CRCW12061001FKTA
Vishay
R5, R6
12 Ω, 1/4 W Chip Resistors
CRCW120612R0FKTA
Vishay
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MRF6S19200H 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6S19200HR3 功能描述:射频MOSFET电源晶体管 HV6 1.9GHZ 56W 28V NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S19200HR5 功能描述:射频MOSFET电源晶体管 HV6 1.9GHZ 56W 28V NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S19200HSR3 功能描述:射频MOSFET电源晶体管 HV6 1.9GHZ 56W 28V NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S19200HSR5 功能描述:射频MOSFET电源晶体管 HV6 1.9GHZ 56W 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray