参数资料
型号: MRF6S21060MR1
厂商: Freescale Semiconductor
文件页数: 17/20页
文件大小: 1366K
描述: MOSFET RF N-CH 28V 14W TO270-4
标准包装: 500
晶体管类型: LDMOS
频率: 2.11GHz
增益: 15.5dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 610mA
功率 - 输出: 14W
电压 - 额定: 68V
封装/外壳: TO-270-4
供应商设备封装: TO-270 WB-4
包装: 带卷 (TR)
6
RF Device Data
Freescale Semiconductor
MRF6S21060NR1 MRF6S21060NBR1
TYPICAL CHARACTERISTICS
200
10
17
1
0
70
Pout, OUTPUT POWER (WATTS) CW
10
16
14
12
60
25_C
50C
40
30
η
D
, DRAIN EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
15
13
11
VDD
=28Vdc
IDQ
= 610 mA
f = 2140 MHz
ηD
Gps
IM3 (dBc), ACPR (dBc)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
1 10010
-- 6 0
-- 1 0
0.1
7th Order
TWO--TONE SPACING (MHz)
VDD
=28Vdc,Pout
= 60 W (PEP), IDQ
= 610 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
5th Order
3rd Order
-- 2 0
-- 3 0
-- 4 0
-- 5 0
Figure 8. Pulsed CW Output Power versus
Input Power
Figure 9. 2--Carrier W--CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
0
-- 6 0
Pout, OUTPUT POWER (WATTS) AVG.
60
0
C
-- 2 0
40
30
-- 3 0
10
10 200100
-- 4 0
40
57
P3dB = 49.986 dBm (99.68 W)
Pin, INPUT POWER (dBm)
VDD
=28Vdc,IDQ
= 610 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 2140 MHz
53
49
45
43
30 3632
34
Actual
Ideal
55
51
47
28
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
IM3
Gps
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
IMD, INTERMODULATIO
N DISTORTION (dBc)
P
out
, OUTPUT POWER (dBm)
G
ps
, POWER GAIN (dB)
VDD
=24V
120
10
16
0
12
11
20
13
14
IDQ
= 610 mA
f = 2140 MHz
50
C
-- 5 0
ηD
ACPR
28 V
32 V
38
1
-- 1 0C
40 60 80
10
20
P1dB = 49.252 dBm (84.18 W)
20
-- 3 0_C
TC
=--30_C
25_C
85_
TC
=--30_C
85_C
25_C
85_
-- 3 0_C
-- 3 0_C
25_
85_C
100
15
100
VDD=28Vdc,IDQ
= 610 mA
f1 = 2135 MHz, f2 = 2145 MHz
2--Carrier W--CDMA, 10 MHz Carrier
Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
25_
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
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