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参数资料
| 型号： | MRF6S21060NR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 12/20页 |
| 文件大小： | 1366K |
| 描述： | MOSFET RF N-CH 28V 14W TO270-4 |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 2.11GHz |
| 增益： | 15.5dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 610mA |
| 功率 - 输出： | 14W |
| 电压 - 额定： | 68V |
| 封装/外壳： | TO-270AB |
| 供应商设备封装： | TO-270 WB-4 |
| 包装： | 带卷 (TR) |
2
RF Device Data
Freescale Semiconductor
MRF6S21060NR1 MRF6S21060NBR1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
°C
Table 5. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
=68Vdc,VGS
=0Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
=28Vdc,VGS
=0Vdc)
IDSS
?
?
1
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
On Characteristics (DC)
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 200
μAdc)
VGS(th)
1.5
2.2
2.5
Vdc
Gate Quiescent Voltage
(VDD
=28Vdc,ID
= 610 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=2.0Adc)
VDS(on)
?
0.3
?
Vdc
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(VDS
=28Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
?
1.5
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 610 mA, Pout
=14WAvg.,f1=2115.5MHz,f2=
2122.5 MHz, 2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @
±5MHz
Offset. IM3 measured in 3.84 MHz Bandwidth @
±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
13.5
15.5
16.5
dB
Drain Efficiency
ηD
24.5
26
?
%
Intermodulation Distortion
IM3
?
-- 3 7
-- 3 5
dBc
Adjacent Channel Power Ratio
ACPR
?
-- 4 0
-- 3 8
dBc
Input Return Loss
IRL
?
-- 1 4
-- 1 0
dB
1. Part is internally matched both on input and output.
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
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|---|---|
| MRF6S21100HSR5 | MOSFET RF N-CHAN 28V 23W NI-780S |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S21060NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S21100HR3 | 功能描述:射频MOSFET电源晶体管 HV6 23W W-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S21100HR5 | 功能描述:射频MOSFET电源晶体管 HV6 23W W-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S21100HS | 制造商:FREESCALE-SEMI 功能描述: |
| MRF6S21100HSR3 | 功能描述:射频MOSFET电源晶体管 HV6 23W W-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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