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| 型号： | MRF6S21190HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/11页 |
| 文件大小： | 418K |
| 描述： | MOSFET RF N-CH 54W NI880S |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 2.11GHz |
| 增益： | 16dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.6A |
| 功率 - 输出： | 54W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-880S |
| 供应商设备封装： | NI-880S |
| 包装： | 带卷 (TR) |
MRF6S21190HR3 MRF6S21190HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA
and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
?
Typical Single-Carrier W-CDMA Performance: VDD
= 28 Volts, I
DQ
=
1600 mA,
Pout
= 54 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain ? 16 dB
Drain Efficiency ? 29%
Device Output Signal PAR ? 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset ? -38 dBc in 3.84 MHz Channel Bandwidth
?
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 175 Watts CW
Output Power
Features
?
100% PAR Tested for Guaranteed Output Power Capability
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Integrated ESD Protection
?
Designed for Digital Predistortion Error Correction Systems
?
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
CW Operation @ TC
= 25
°C
Derate above 25°C
CW
175
1
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 85°C, 120 W CW
Case Temperature 83°C, 56 W CW
RθJC
0.29
0.30
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
MRF6S21190HR3
MRF6S21190HSR3
2110-2170 MHz, 54 W AVG., 28 V
SINGLE W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465C-02, STYLE 1
NI-880S
MRF6S21190HSR3
CASE 465B-03, STYLE 1
NI-880
MRF6S21190HR3
Document Number: MRF6S21190H
Rev. 1, 3/2008
Freescale Semiconductor
Technical Data
?
Freescale Semiconductor, Inc., 2008. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S23100H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S23100HR3 | 功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S23100HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S23100HR5 | 功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S23100HSR3 | 功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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