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| 型号： | MRF6S21190HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 4/11页 |
| 文件大小： | 418K |
| 描述： | MOSFET RF N-CH 54W NI880S |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 2.11GHz |
| 增益： | 16dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.6A |
| 功率 - 输出： | 54W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-880S |
| 供应商设备封装： | NI-880S |
| 包装： | 带卷 (TR) |
2
RF Device Data
Freescale Semiconductor
MRF6S21190HR3 MRF6S21190HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1B (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
= 68 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 28 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 420
μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDD
= 28 Vdc, I
D
= 1600 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 4.2 Adc)
VDS(on)
0.12
0.21
0.31
Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
?
2.8
?
pF
Output Equivalent Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Cout
?
185
?
pF
Input Capacitance
(VDS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
Ciss
?
526
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1600 mA, P
out
= 54 W Avg., f = 2112.5 MHz and f =
2167.5 MHz, Single-Carrier W-CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
14.5
16
17.5
dB
Drain Efficiency
ηD
26
29
?
%
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
PAR
5.5
6.1
?
dB
Adjacent Channel Power Ratio
ACPR
?
-38
-35
dBc
Input Return Loss
IRL
?
-13
-8
dB
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, IDQ
= 1600 mA, 2110-2170
MHz Bandwidth
Video Bandwidth @ 175 W PEP Pout
where IM3 = -30 dBc
(Tone Spacing from 100 kHz to VBW) ΔIMD3 = IMD3 @ VBW
frequency - IMD3 @ 100 kHz <1 dBc (both sidebands)
VBW
?
50
?
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout
= 54 W Avg.
GF
?
0.16
?
dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout
= 175 W CW
Φ
?
0.52
?
°
Average Group Delay @ Pout
= 175 W CW, f = 2140 MHz
Delay
?
2.1
?
ns
Part-to-Part Insertion Phase Variation @ Pout
= 175 W CW,
f = 2140 MHz
ΔΦ
?
28
?
°
Gain Variation over Temperature
(-30°C to +85°C)
ΔG
?
0.016
?
dB/°C
1. Part internally matched both on input and output.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S23100H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S23100HR3 | 功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S23100HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S23100HR5 | 功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S23100HSR3 | 功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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