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参数资料
| 型号： | MRF6S23140HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN |
| 文件页数： | 8/12页 |
| 文件大小： | 432K |
| 代理商： | MRF6S23140HR3 |
MRF6S23140HR3 MRF6S23140HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
18
9
12
15
2430
2270
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ Pout = 28 Watts Avg.
2410
2390
2370
2350
2330
2310
2290
15.6
15.5
42
28
27
26
36
40
η
D
,DRAIN
EFFICIENCY
(%)
ηD
15.4
15.3
15.2
15
14.8
14.9
15.1
38
34
25
6
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
18
9
12
15
2430
2270
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance @ Pout = 56 Watts Avg.
2410
2390
2370
2350
2330
2310
2290
15.1
15
33
38
37
36
27
31
η
D
,DRAIN
EFFICIENCY
(%)
ηD
14.9
14.8
14.7
14.5
14.3
14.4
14.6
29
25
35
6
Figure 5. Two-Tone Power Gain versus
Output Power
100
11
18
1
IDQ = 1950 mA
1625 mA
Pout, OUTPUT POWER (WATTS) PEP
16
15
14
10
300
G
ps
,POWER
GAIN
(dB)
13
1300 mA
975 mA
650 mA
VDD = 28 Vdc
f1 = 2345 MHz, f2 = 2355 MHz
TwoTone Measurements, 10 MHz Tone Spacing
Figure 6. Third Order Intermodulation Distortion
versus Output Power
50
1
IDQ = 650 mA
Pout, OUTPUT POWER (WATTS) PEP
100
20
30
40
60
VDD = 28 Vdc
f1 = 2345 MHz, f2 = 2355 MHz
TwoTone Measurements, 10 MHz Tone Spacing
10
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
10
1625 mA
975 mA
1300 mA
17
12
300
VDD = 28 Vdc
Pout = 28 W (Avg.)
IDQ = 1300 mA, 2Carrier WCDMA
10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
IM3
VDD = 28 Vdc
Pout = 56 W (Avg.)
IDQ = 1300 mA, 2Carrier WCDMA
10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
1950 mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S23140HR5 | 功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 28W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S23140HSR3 | 功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 28W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S23140HSR5 | 功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 28W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S24140H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S24140HR3 | 功能描述:射频MOSFET电源晶体管 2.4GHZ HV6 W-CDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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