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参数资料
| 型号： | MRF6S23140HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN |
| 文件页数： | 9/12页 |
| 文件大小： | 432K |
| 代理商： | MRF6S23140HR3 |
6
RF Device Data
Freescale Semiconductor
MRF6S23140HR3 MRF6S23140HSR3
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
60
0
0.1
7th Order
TWOTONE SPACING (MHz)
VDD = 28 Vdc, Pout = 140 W (PEP)
IDQ = 1300 mA, TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 2350 MHz
5th Order
3rd Order
20
30
40
50
1
100
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
Figure 8. Pulsed CW Output Power versus
Input Power
43
59
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 1300 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 2350 MHz
49
45
33
31
37
35
41
Actual
Ideal
57
55
51
53
47
29
P
out
,OUTPUT
POWER
(dBm)
IM3
(dBc),
ACPR
(dBc)
Figure 9. 2-Carrier W-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
0
55
Pout, OUTPUT POWER (WATTS) AVG.
42
20
30
25
24
30
18
35
6
45
1
10
100
40
12
IM3
Gps
TC = 30_C
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
36
50
ηD
25
_C
30
_C
85
_C
ACPR
10
39
P6dB = 53.51 dBm (224.39 W)
P3dB = 53.04 dBm (201.42 W)
P1dB = 52.22 dBm (162.72 W)
0.5
300
25
_C
85
_C
30
_C
25
_C
30
_C
85
_C
VDD = 28 Vdc, IDQ = 1300 mA
f1 = 2345 MHz, f2 = 2355 MHz
2Carrier WCDMA, 10 MHz
Carrier Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S23140HR5 | 功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 28W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S23140HSR3 | 功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 28W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S23140HSR5 | 功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 28W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S24140H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S24140HR3 | 功能描述:射频MOSFET电源晶体管 2.4GHZ HV6 W-CDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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