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参数资料
| 型号： | MRF6S24140HS |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 5/12页 |
| 文件大小： | 390K |
| 描述： | IC MOSFET RF N-CHAN NI-880S |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS |
| 频率： | 2.39GHz |
| 增益： | 15.2dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.3A |
| 功率 - 输出： | 28W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-880S |
| 供应商设备封装： | NI-880S |
| 包装： | 散装 |
2
RF Device Data
Freescale Semiconductor, Inc.
MRF6S24140HR3 MRF6S24140HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics
(TA
=25?C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
=68Vdc,VGS
=0Vdc)
IDSS
—
—
10
?Adc
Zero Gate Voltage Drain Leakage Current
(VDS
=28Vdc,VGS
=0Vdc)
IDSS
—
—
1
?Adc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
—
—
500
nAdc
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 300
?Adc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDD
=28Vdc,ID
= 1300 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=3Adc)
VDS(on)
0.1
0.21
0.3
Vdc
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(VDS
=28Vdc?
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
—
2
—
pF
Functional Tests
(In Freescale Test Fifxture, 50 ohm system) VDD
=28Vdc,IDQ
= 1300 mA, Pout
= 28 W Avg., f = 2390 MHz, 2--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @
?5 MHz Offset. IM3 measured in
3.84 MHz Bandwidth @
?10 MHz Offset. Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
13
15.2
17
dB
Drain Efficiency
?D
23
25
—
%
Intermodulation Distortion
IM3
—
-- 3 7
-- 3 5
dBc
Adjacent Channel Power Ratio
ACPR
—
-- 4 0
-- 3 8
dBc
Input Return Loss
IRL
—
-- 1 5
—
dB
1. Part internally matched both on input and output.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S24140HSR3 | 功能描述:射频MOSFET电源晶体管 2.4GHZ HV6 28W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S24140HSR5 | 功能描述:射频MOSFET电源晶体管 2.4GHZ HV6 28W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S27015GNR1 | 功能描述:射频MOSFET电源晶体管 HV6 2.7GHZ 15W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S27015N | 制造商:Freescale Semiconductor 功能描述:TRANS MOSFET N-CH 68V 3PIN TO-270 - Bulk |
| MRF6S27015NR1 | 功能描述:射频MOSFET电源晶体管 HV6 2.7GHZ 15W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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