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| 型号： | MRF6S9060NR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/18页 |
| 文件大小： | 784K |
| 描述： | MOSFET RF N-CH 28V 14W TO-270-2 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 880MHz |
| 增益： | 21.4dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 450mA |
| 功率 - 输出： | 14W |
| 电压 - 额定： | 68V |
| 封装/外壳： | TO-270AA |
| 供应商设备封装： | TO-270-2 |
| 包装： | 带卷 (TR) |
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ARCHIVE INFORMATION
MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration
PCN12895 for more details. MRF6S9060NBR1 no longer manufactured.
MRF6S9060NR1 MRF6S9060NBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large-signal, common-source amplifier
applications in 28 volt base station equipment.
?
Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD
= 28 Volts,
IDQ
= 450 mA, P
out
= 14 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain ? 21.4 dB
Drain Efficiency ? 32.1%
ACPR @ 750 kHz Offset ? -47.6 dBc in 30 kHz Bandwidth
GSM EDGE Application
?
Typical GSM EDGE Performance: VDD
= 28 Volts, I
DQ
= 500 mA,
Pout
= 21 Watts Avg., Full Frequency Band (921-960 MHz)
Power Gain ? 20 dB
Drain Efficiency ? 46%
Spectral Regrowth @ 400 kHz Offset = -62 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM ? 1.5% rms
GSM
Application
?
Typical GSM Performance: VDD
= 28 Volts, I
DQ
= 500 mA, P
out
= 60 Watts,
Full Frequency Band (921-960 MHz)
Power Gain ? 20 dB
Drain Efficiency ? 63%
?
Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 60 Watts CW
Output Power
Features
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Integrated ESD Protection
?
225°C Capable Plastic Package
?
N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
?
TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
?
TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
- 0.5, +68
Vdc
Gate-Source Voltage
VGS
- 0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
Document Number: MRF6S9060N
Rev. 4, 8/2008
Freescale Semiconductor
Technical Data
880 MHz, 14 W AVG., 28 V
SINGLE N-CDMA
LATERAL N-CHANNEL
BROADBAND RF POWER MOSFETs
MRF6S9060NR1
MRF6S9060NBR1
CASE 1265-09, STYLE 1
TO-270-2
PLASTIC
MRF6S9060NR1
CASE 1337-04, STYLE 1
TO-272-2
PLASTIC
MRF6S9060NBR1
?
Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved.
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相关代理商/技术参数 |
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|---|---|
| MRF6S9125 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S9125MBR1 | 功能描述:MOSFET RF N-CH 28V 27W TO-272-4 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6S9125MR1 | 功能描述:MOSFET RF N-CH 28V 27W TO-270-4 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6S9125N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S9125NBR1 | 功能描述:MOSFET RF N-CH 28V 27W TO-272-4 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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