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| 型号： | MRF6V10010NR4 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 642K |
| 描述： | MOSFET RF N-CHAN PLD-1.5 |
| 产品培训模块： | RF Broadcast Solutions |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS |
| 频率： | 1.09GHz |
| 增益： | 25dB |
| 电压 - 测试： | 50V |
| 额定电流： | 2.5mA |
| 电流 - 测试： | 10mA |
| 功率 - 输出： | 10W |
| 电压 - 额定： | 100V |
| 封装/外壳： | PLD-1.5 |
| 供应商设备封装： | PLD-1.5 |
| 包装： | 标准包装 |
| 产品目录页面： | 560 (CN2011-ZH PDF) |
| 其它名称： | MRF6V10010NR4DKR |
MRF6V10010NR4
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
RF Power transistor designed for applications operating at frequencies
between 960 and 1400 MHz, 1% to 20% duty
cycle. This device is suitable for
use in pulsed applications.
?
Typical Pulsed Performance: VDD
=50Volts,IDQ
=10mA,Pout
= 10 Watts
Peak (2 W Avg.), f = 1090 MHz, Pulse Width = 100
μsec, Duty Cycle = 20%
Power Gain ? 25 dB
Drain Efficiency ? 69%
Features
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
Qualified Up to a Maximum of 50 VDD
Operation
?
Integrated ESD Protection
?
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
?
RoHS Compliant
?
In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +100
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 79°C, 10 W Pulsed, 100
μsec Pulse Width, 20% Duty Cycle
ZθJC
1.6
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF6V10010N
Rev. 3, 7/2010
Freescale Semiconductor
Technical Data
1090 MHz, 10 W, 50 V
PULSED
LATERAL N--CHANNEL
RF POWER MOSFET
MRF6V10010NR4
CASE 466--03, STYLE 1
PLD--1.5
PLASTIC
?
Freescale Semiconductor, Inc., 2008--2010.
All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6V10010NR4-CUT TAPE | 制造商:Freescale 功能描述:MRF6V10010N Series 1090 MHz 10 W 50 V Pulsed Lateral N-Channel RF Power MOSFET |
| MRF6V10010NT1 | 制造商:Freescale Semiconductor 功能描述:VHV6 10W PULSE PLD1.5 - Tape and Reel |
| MRF6V10250HSR3 | 功能描述:射频MOSFET电源晶体管 VHV6 250W AVIONIC NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V10250HSR5 | 功能描述:射频MOSFET电源晶体管 VHV6 250W AVIONIC NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V12250HR3 | 功能描述:射频MOSFET电源晶体管 VHV6 250W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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