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| 型号： | MRF6V12500HR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/15页 |
| 文件大小： | 959K |
| 描述： | FET RF N-CH 1.03GHZ 100V NI-780H |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS |
| 频率： | 1.03GHz |
| 增益： | 19.7dB |
| 电压 - 测试： | 50V |
| 电流 - 测试： | 200mA |
| 功率 - 输出： | 500W |
| 电压 - 额定： | 100V |
| 封装/外壳： | NI-780 |
| 供应商设备封装： | NI-780 |
| 包装： | 标准包装 |
| 其它名称： | MRF6V12500HR5DKR |
MRF6V12500HR3 MRF6V12500HSR3
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF Power transistors designed for applications operating at frequencies
between 960 and 1215 MHz. These devices are suitable for use in pulse
applications.
?
Typical Pulse Performance: VDD
=50Volts,IDQ
= 200 mA,
Pulse Width = 128
μsec, Duty Cycle = 10%
Application
Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
Narrowband
500 Peak
1030
19.7
62.0
Broadband
500 Peak
960--1215
18.5
57.0
?
Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 Watts Peak
Power
Features
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Qualified Up to a Maximum of 50 VDD
Operation
?
Integrated ESD Protection
?
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
?
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
For R5 Tape and Reel option, see p. 14.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +110
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2,3)
Unit
Thermal Impedance, Junction to Case
Case Temperature 80°C, 500 W Pulse, 128
μsec Pulse Width, 10% Duty Cycle
ZθJC
0.044
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF6V12500H
Rev. 3, 6/2012
Freescale Semiconductor
Technical Data
960--1215 MHz, 500 W, 50 V
PULSE
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF6V12500HR3
MRF6V12500HSR3
CASE 465A--06, STYLE 1
NI--780S
MRF6V12500HSR3
CASE 465--06, STYLE 1
NI--780
MRF6V12500HR3
?
Freescale Semiconductor, Inc., 2009--2010, 2012.
All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6V12500HSR3 | 功能描述:射频MOSFET电源晶体管 VHV6 500W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V12500HSR5 | 功能描述:射频MOSFET电源晶体管 VHV6 500W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V13250HR3 | 功能描述:射频MOSFET电源晶体管 VHV6 250W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V13250HR5 | 功能描述:射频MOSFET电源晶体管 VHV6 250W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V13250HSR3 | 功能描述:射频MOSFET电源晶体管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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