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| 型号： | MRF6V2010GNR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/21页 |
| 文件大小： | 1668K |
| 描述： | MOSFET RF N-CH 10W TO-270-2 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 功率 - 输出： | 10W |
| 封装/外壳： | TO-270AA |
| 供应商设备封装： | TO-270-2 |
| 包装： | 带卷 (TR) |
MRF6V2010NR1 MRF6V2010NBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with
frequencies up to 450 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
?
Typical CW Performance at 220 MHz: VDD
=50Volts,IDQ
=30mA,
Pout
= 10 Watts
Power Gain ? 23.9 dB
Drain Efficiency ? 62%
?
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 10 Watts CW
Output Power
Features
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
Qualified Up to a Maximum of 50 VDD
Operation
?
Integrated ESD Protection
?
225°C Capable Plastic Package
?
RoHS Compliant
?
TO--270--2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
?
TO--272--2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +110
Vdc
Gate--Source Voltage
VGS
--0.5, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 10 W CW
RθJC
3.0
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF6V2010N
Rev. 5, 4/2010
Freescale Semiconductor
Technical Data
10--450 MHz, 10 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
MRF6V2010NR1
MRF6V2010NBR1
CASE 1265--09, STYLE 1
T O -- 2 7 0 -- 2
PLASTIC
MRF6V2010NR1
CASE 1337--04, STYLE 1
T O -- 2 7 2 -- 2
PLASTIC
MRF6V2010NBR1
?
Freescale Semiconductor, Inc., 2007--2008, 2010.
All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6V2010N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6V2010N_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6V2010NB | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6V2010NBR1 | 功能描述:射频MOSFET电源晶体管 VHV6 10W TO272-2N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V2010NBR5 | 功能描述:射频MOSFET电源晶体管 VHV6 10W Latrl N-Ch. Broadband MOSFET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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