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参数资料
| 型号： | MRF6V2010GNR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 18/21页 |
| 文件大小： | 1668K |
| 描述： | MOSFET RF N-CH 10W TO-270-2 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 功率 - 输出： | 10W |
| 封装/外壳： | TO-270AA |
| 供应商设备封装： | TO-270-2 |
| 包装： | 带卷 (TR) |
6
RF Device Data
Freescale Semiconductor
MRF6V2010NR1 MRF6V2010NBR1
TYPICAL CHARACTERISTICS
Figure 9. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
, POWER GAIN (dB)
VDD
=20V
25 V
082
46
10 12
14
10
26
18
16
24
22
IDQ
=30mA
f = 220 MHz
30 V
35 V
40 V
50 V
20
45 V
14
12
25
20
45
0
25_C
TC
=--30_C
85_C
10 2015
5
35
30
25
Pin, INPUT POWER (dBm)
Figure 10. Power Output versus Power Input
P
out
, OUTPUT POWER (dBm)
VDD
=50Vdc
IDQ
=30mA
f = 220 MHz
40
18
26
0.1
0
72
C
1
25
23
21
63
54C
45
36
27
18
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency versus CW Output Power
G
ps
, POWER GAIN (dB)
η
D,
DRAIN EFFICIENCY (%)
ηD
24
22
20
10 20
25_C
TC
=--30_C
85_C
85_
Gps
VDD
=50Vdc
IDQ
=30mA
f = 220 MHz
25_
-- 3 0_C
19
9
19
27
0
0
80
2
25
23
21
60
50
40
30
20
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain and Drain Efficiency
versus CW Output Power
G
ps
, POWER GAIN (dB)
η
D,
DRAIN EFFICIENCY (%)
24
22
20
46810 12
Gps
@64MHz
10
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD
=50Vdc,Pout
= 10 W CW, and
ηD
= 62%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
105
110 130 150 170 190
MTTF (HOURS)
210 230
26
Gps
@ 220 MHz
70
ηD
@
450 MHz
Gps
@ 450 MHz
ηD
@
220 MHz
ηD
@
64 MHz
ηD
@
130 MHz
Gps
@ 130 MHz
VDD
=50Vdc
IDQ
=30mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6V2010N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6V2010N_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6V2010NB | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6V2010NBR1 | 功能描述:射频MOSFET电源晶体管 VHV6 10W TO272-2N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V2010NBR5 | 功能描述:射频MOSFET电源晶体管 VHV6 10W Latrl N-Ch. Broadband MOSFET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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