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| 型号： | MRF6V3090NR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/19页 |
| 文件大小： | 942K |
| 描述： | FET RF N-CH 860MHZ 50V TO270-4 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 860MHz |
| 增益： | 22dB |
| 电压 - 测试： | 50V |
| 电流 - 测试： | 350mA |
| 功率 - 输出： | 18W |
| 电压 - 额定： | 110V |
| 封装/外壳： | TO-270AB |
| 供应商设备封装： | TO-270 WB-4 |
| 包装： | 带卷 (TR) |
MRF6V3090NR1 MRF6V3090NR5
MRF6V3090NBR1 MRF6V3090NBR5
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistors
Enhancement--Mode Lateral MOSFETs
Designed for commercial and industrial broadband applications with
frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast
applications.
?
Typical Performance (Narrowband Test Circuit): VDD
=50Volts,IDQ
=
350 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
ACPR
(dBc)
DVB--T (8k OFDM)
18 Avg.
860
22.0
28.5
--62.0
?
Typical Performance (Broadband Reference Circuit): VDD
=50Volts,
IDQ
= 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
Output
Signal PAR
(dB)
IMD
Shoulder
(dBc)
DVB--T (8k OFDM)
18 Avg.
470
21.6
26.8
8.6
--31.8
650
22.9
28.0
8.7
--34.4
860
21.9
28.3
7.9
--29.2
Features
?
Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz,
90 Watts CW Output Power
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
Internally Input Matched for Ease of Use
?
Qualified Up to a Maximum of 50 VDD
Operation
?
Integrated ESD Protection
?
Excellent Thermal Stability
?
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
?
225°C Capable Plastic Package
?
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +110
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 76°C, 18 W CW, 50 Vdc, IDQ
= 350 mA, 860 MHz
Case Temperature 80°C, 90 W CW, 50 Vdc, IDQ
= 350 mA, 860 MHz
RθJC
0.79
0.82
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF6V3090N
Rev. 1, 12/2011
Freescale Semiconductor
Technical Data
470--860 MHz, 90 W, 50 V
BROADBAND
RF POWER LDMOS TRANSISTORS
PARTS ARE SINGLE--ENDED
(Top View)
Drain
Figure 1. Pin Connections
Drain
Gate
Gate
Note: Exposed backside of the package is
the source terminal for the transistor.
CASE 1484--04, STYLE 1
T O -- 2 7 2 W B -- 4
PLASTIC
MRF6V3090NBR1(NBR5)
CASE 1486--03, STYLE 1
T O -- 2 7 0 W B -- 4
PLASTIC
MRF6V3090NR1(NR5)
MRF6V3090NR1
MRF6V3090NR5
MRF6V3090NBR1
MRF6V3090NBR5
?
Freescale Semiconductor, Inc., 2010--2011.
All rights reserved.
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