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| 型号： | MRF6VP121KHSR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/20页 |
| 文件大小： | 1167K |
| 描述： | MOSFET RF N-CH 50V NI-1230S |
| 标准包装： | 150 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 1.03GHz |
| 增益： | 20dB |
| 电压 - 测试： | 50V |
| 额定电流： | 100µA |
| 电流 - 测试： | 150mA |
| 功率 - 输出： | 1000W |
| 电压 - 额定： | 110V |
| 封装/外壳： | NI-1230S |
| 供应商设备封装： | NI-1230S |
| 包装： | 带卷 (TR) |
MRF6VP121KHR6 MRF6VP121KHSR6
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF Power transistors designed for applications operating at frequencies
between 965 and 1215 MHz. These devices are suitable for use in pulsed
applications.
?
Typical Pulsed Performance: VDD
=50Volts,IDQ
= 150 mA, Pout
=
1000 Watts Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128
μsec,
Duty Cycle = 10%
Power Gain ? 20 dB
Drain Efficiency ? 56%
?
Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 Watts Peak
Power
Features
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Qualified Up to a Maximum of 50 VDD
Operation
?
Integrated ESD Protection
?
Designed for Push--Pull Operation
?
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
?
RoHS Compliant
?
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +110
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
Document Number: MRF6VP121KH
Rev. 3, 4/2010
Freescale Semiconductor
Technical Data
965--1215 MHz, 1000 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
MRF6VP121KHR6
MRF6VP121KHSR6
CASE 375D--05, STYLE 1
NI--1230
MRF6VP121KHR6
PARTS ARE PUSH--PULL
CASE 375E--04, STYLE 1
NI--1230S
MRF6VP121KHSR6
(Top View)
GSA
31RFoutA/VDSA
GSB
42RFoutB/VDSB
RFinA/V
RFinB/V
Figure 1. Pin Connections
?
Freescale Semiconductor, Inc., 2009--2010.
All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6VP21KHR5 | 功能描述:射频MOSFET电源晶体管 VHV6 225MHZ 1000W NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP21KHR6 | 功能描述:射频MOSFET电源晶体管 VHV6 225MHZ 1000W NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP21KHR6_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF6VP2600H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF6VP2600HR5 | 功能描述:射频MOSFET电源晶体管 VHV6 600W 225MHZ NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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