参数资料
型号: MRF6VP121KHSR6
厂商: Freescale Semiconductor
文件页数: 17/20页
文件大小: 1167K
描述: MOSFET RF N-CH 50V NI-1230S
标准包装: 150
晶体管类型: LDMOS(双)
频率: 1.03GHz
增益: 20dB
电压 - 测试: 50V
额定电流: 100µA
电流 - 测试: 150mA
功率 - 输出: 1000W
电压 - 额定: 110V
封装/外壳: NI-1230S
供应商设备封装: NI-1230S
包装: 带卷 (TR)
6
RF Device Data
Freescale Semiconductor
MRF6VP121KHR6 MRF6VP121KHSR6
TYPICAL CHARACTERISTICS
50
1
1000
02010
30
40
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
Ciss
100
10
Coss
Crss
Measured with
±30 mV(rms)ac @ 1 MHz
VGS
=0Vdc
22
1
0
60
10
18
50
40
30
Pout, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
η
D,
DRAIN EFFICIENCY (%)
ηD
17
16
1000 10000
Gps
20
19
21
100
10
VDD
=50Vdc
IDQ
= 150 mA
f = 1030 MHz
Pulse Width = 128
μsec
Duty Cycle = 10%
21.5
500
Pout, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain versus
Output Power
700 800 900 1000
G
ps
, POWER GAIN (dB)
P3dB = 1182 W (60.7 dBm)
Actual
Ideal
VDD
=50Vdc
IDQ
= 150 mA
f = 1030 MHz
Pulse Width = 128
μsec
Duty Cycle = 10%
17
25
10
20
19
Pout, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
G
ps
, POWER GAIN (dB)
100
18
IDQ
= 6000 mA
1000 10000
1500 mA
150 mA
375 mA
750 mA
21
22
Figure 8. Pulsed Power Gain versus
Output Power
Pout, OUTPUT POWER (WATTS) PULSED
G
ps
, POWER GAIN (dB)
VDD
=30V
23
0
16
35 V
20
45 V
200 400 600 800 1000 1200 1400
50 V
40 V
18
Note:
Each side of device measured separately.
20
22
600
P1dB = 1065 W (60.3 dBm)
3000 mA
22
17
19
21
IDQ
= 150 mA, f = 1030 MHz
Pulse Width = 128
μsec
Duty Cycle = 10%
45
40
65
20
25_C
30 4035
25
55
50
Pin, INPUT POWER (dBm) PULSED
Figure 9. Pulsed Output Power versus
Input Power
P
out
, OUTPUT POWER (dBm)
60
45
VDD
=50Vdc
IDQ
= 150 mA
f = 1030 MHz
Pulse Width = 128
μsec
Duty Cycle = 10%
16
23
24
VDD
=50Vdc
f = 1030 MHz
Pulse Width = 128
μsec
Duty Cycle = 10%
85_C
TC
=--30_C
1300
1200
1100
21
20.5
20
19.5
19
18.5
18
1
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