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| 型号： | MRF6VP3091NBR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/20页 |
| 文件大小： | 1099K |
| 描述： | MOSFET RF 50V 350MA TO272-4 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 860MHz |
| 增益： | 22dB |
| 电压 - 测试： | 50V |
| 电流 - 测试： | 350mA |
| 功率 - 输出： | 18W |
| 电压 - 额定： | 115V |
| 封装/外壳： | TO-272BB |
| 供应商设备封装： | TO-272 WB-4 |
| 包装： | 带卷 (TR) |
ll rights reserved.MRF6VP3091NR1 MRF6VP3091NR5
MRF6VP3091NBR1 MRF6VP3091NBR5
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistors
Enhancement--Mode Lateral MOSFETs
Designed for commercial and industrial broadband applications with
frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast
applications.
?
Typical Performance (Broadband Reference Circuit): VDD
=50Volts,
IDQ
= 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
Output
Signal PAR
(dB)
IMD
Shoulder
(dBc)
DVB--T (8k OFDM)
18 Avg.
470
21.8
31.0
7.9
--27.8
650
21.6
26.4
8.4
--37.6
860
21.7
27.6
7.1
--30.4
Features
?
Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz,
90 Watts CW Output Power
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
Internally Input Matched for Ease of Use
?
Qualified Up to a Maximum of 50 VDD
Operation
?
Excellent Thermal Stability
?
Device can be used Single--Ended or in a Push--Pull Configuration
?
Integrated ESD Protection
?
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
?
225°C Capable Plastic Package
?
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +115
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 76°C, 18 W CW, 50 Vdc, IDQ
= 350 mA, 860 MHz
Case Temperature 80°C, 90 W CW, 50 Vdc, IDQ
= 350 mA, 860 MHz
RθJC
0.79
0.82
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF6VP3091N
Rev. 1, 12/2011
Freescale Semiconductor
Technical Data
(Top View)
470--860 MHz, 90 W, 50 V
BROADBAND
RF POWER LDMOS TRANSISTORS
PARTS ARE PUSH--PULL
Drain 1
Figure 1. Pin Connections
Drain 2
Gate 1
Gate 2
Note: Exposed backside of the package is
the source terminal for the transistor.
CASE 1484--04, STYLE 1
T O -- 2 7 2 W B -- 4
PLASTIC
MRF6VP3091NBR1(NBR5)
CASE 1486--03, STYLE 1
T O -- 2 7 0 W B -- 4
PLASTIC
MRF6VP3091NR1(NR5)
MRF6VP3091NR1
MRF6VP3091NR5
MRF6VP3091NBR1
MRF6VP3091NBR5
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Freescale Semiconductor, Inc., 2011.
A
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相关代理商/技术参数 |
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|---|---|
| MRF6VP3091NBR5 | 功能描述:射频MOSFET电源晶体管 VHV6 50V 4.5W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP3091NR1 | 功能描述:射频MOSFET电源晶体管 VHV6 50V 4.5W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP3091NR5 | 功能描述:射频MOSFET电源晶体管 VHV6 50V 4.5W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP3450HR5 | 功能描述:射频MOSFET电源晶体管 VHV6 450W 860MHZ NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP3450HR5-CUT TAPE | 制造商:Freescale 功能描述:MRF6VP3450H Series 470 - 860 MHz 110 V N-Channel RF Power Mosfet |
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