- 您现在的位置：买卖IC网 > Datasheet目录93 > MRF7S16150HSR5 (Freescale Semiconductor)MOSFET RF N-CH NI-780S Datasheet资料下载
参数资料
| 型号： | MRF7S16150HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/12页 |
| 文件大小： | 452K |
| 描述： | MOSFET RF N-CH NI-780S |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 1.6GHz |
| 增益： | 19.7dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.5A |
| 功率 - 输出： | 32W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780S |
| 供应商设备封装： | NI-780S |
| 包装： | 带卷 (TR) |
MRF7S16150HR3 MRF7S16150HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for WiMAX base station applications with frequencies up to
1700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
?
Typical WiMAX Performance: VDD
= 28 Volts, I
DQ
= 1500 mA,
Pout
= 32 Watts Avg., f = 1600 and 1660 MHz, 802.16d, 64 QAM
3/4,
4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5
dB @ 0.01%
Probability on CCDF.
Power Gain ? 19.7
dB
Drain Efficiency ? 25.4%
Device Output Signal PAR ? 8.2 dB @ 0.01% Probability on CCDF
ACPR @ 5.25 MHz Offset ? -47.5
dBc in 0.5
MHz Channel Bandwidth
?
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1630
MHz, 150
Watts CW
Output Power
?
Pout
@ 1 dB Compression Point
150 Watts CW
Features
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Integrated ESD Protection
?
Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 149 W CW
Case Temperature 75°C, 32 W CW
RθJC
0.34
0.37
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF7S16150H
Rev. 1, 12/2008
Freescale Semiconductor
Technical Data
MRF7S16150HR3
MRF7S16150HSR3
1600-1660 MHz, 32 W AVG., 28 V
WiMAX
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI-780
MRF7S16150HR3
CASE 465A-06, STYLE 1
NI-780S
MRF7S16150HSR3
?
Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| MRF7S18125AHSR5 | MOSFET RF N-CH CW 125W NI780S |
| MRF7S18125BHSR5 | MOSFET RF N-CH CW 125W NI780 |
| MRF7S18170HSR5 | MOSFET RF N-CH NI-880S |
| MRF7S19080HSR5 | MOSFET RF N-CH NI-780S |
| MRF7S19100NR1 | MOSFET RF N-CH 28V 29W TO270-4 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF7S18125AHR3 | 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S18125AHR5 | 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S18125AHSR | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF7S18125AHSR3 | 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ CW125W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S18125AHSR5 | 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ CW125W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。