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| 型号： | MRF6VP3091NBR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 14/20页 |
| 文件大小： | 1099K |
| 描述： | MOSFET RF 50V 350MA TO272-4 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 860MHz |
| 增益： | 22dB |
| 电压 - 测试： | 50V |
| 电流 - 测试： | 350mA |
| 功率 - 输出： | 18W |
| 电压 - 额定： | 115V |
| 封装/外壳： | TO-272BB |
| 供应商设备封装： | TO-272 WB-4 |
| 包装： | 带卷 (TR) |
MRF6VP3091NR1 MRF6VP3091NR5
MRF6VP3091NBR1 MRF6VP3091NBR5
3
RF Device Data
Freescale Semiconductor, Inc.
Figure 2. MRF6VP3091NR1(NBR1) 860 MHz Single--Ended Narrowband Test Circuit Schematic
Z10, Z11 1.292″×0.079″
Microstrip
Z12 0.680″×0.571″
Microstrip
Z13 0.132″×0.117″
Microstrip
Z14 0.705″×0.117″
Microstrip
Z15 0.159″×0.117″
Microstrip
Z16 0.140″×0.067″
Microstrip
Z17 0.077″×0.067″
Microstrip
Z18 0.163″×0.067″
Microstrip
Z1 0.266″×0.067″
Microstrip
Z2 0.331″×0.067″
Microstrip
Z3 0.598″×0.067″
Microstrip
Z4 0.315″×0.276″
Microstrip
Z5 0.054″×0.669″
Microstrip
Z6 0.419″×0.669″
Microstrip
Z7 0.256″×0.669″
Microstrip
Z8 0.986″×0.071″
Microstrip
Z9 0.201″×0.571″
Microstrip
INPUT
Z1
RF
C5
Z2
Z3
Z4
Z5
Z7
Z13
C14
RF
Z18
OUTPUT
Z15
Z16
VBIAS
VSUPPLY
R1
C9
C10
C8
C1
C3
Z9
Z17
Z14
C12
C11
C4
R2
C6
C16 C17 C18
+
+
Z10
Z11
Z8
C2
Z6
C7
Z12
C15
C13
+
DUT
Table 6. MRF6VP3091NR1(NBR1) 860 MHz Single--Ended Narrowband Test Circuit Component Designations and
Values
Part
Description
Part Number
Manufacturer
C1
22
μF, 35 V Tantalum Capacitor
T491X226K035AT
Kermet
C2, C9, C17
10
μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C3, C5, C8, C14, C16
43 pF Chip Capacitors
ATC100B430JT500XT
ATC
C4
6.2 pF Chip Capacitor
ATC100B6R2BT500XT
ATC
C6
2.2 pF Chip Capacitor
ATC100B2R2JT500XT
ATC
C7
9.1 pF Chip Capacitor
ATC100B9R1CT500XT
ATC
C10, C18
220
μF, 100 V Electrolytic Capacitors
EEVFK2A221M
Panasonic--ECG
C11, C15
7.5 pF Chip Capacitors
ATC100B7R5CT500XT
ATC
C12
3.0 pF Chip Capacitor
ATC100B3R0CT500XT
ATC
C13
0.7 pF Chip Capacitor
ATC100B0R7BT500XT
ATC
R1
10 k?, 1/4 W Chip Resistor
CRCW120610KOJNEA
Vishay
R2
10
?, 1/4 W Chip Resistor
CRCW120610ROJNEA
Vishay
PCB
0.030″,
εr
=3.5
RF--35
Taconic
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| MRF6VP3091NBR5 | 功能描述:射频MOSFET电源晶体管 VHV6 50V 4.5W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP3091NR1 | 功能描述:射频MOSFET电源晶体管 VHV6 50V 4.5W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP3091NR5 | 功能描述:射频MOSFET电源晶体管 VHV6 50V 4.5W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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| MRF6VP3450HR5-CUT TAPE | 制造商:Freescale 功能描述:MRF6VP3450H Series 470 - 860 MHz 110 V N-Channel RF Power Mosfet |
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