- 您现在的位置：买卖IC网 > Datasheet目录93 > MRF6VP121KHSR6 (Freescale Semiconductor)MOSFET RF N-CH 50V NI-1230S Datasheet资料下载
参数资料
| 型号： | MRF6VP121KHSR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 12/20页 |
| 文件大小： | 1167K |
| 描述： | MOSFET RF N-CH 50V NI-1230S |
| 标准包装： | 150 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 1.03GHz |
| 增益： | 20dB |
| 电压 - 测试： | 50V |
| 额定电流： | 100µA |
| 电流 - 测试： | 150mA |
| 功率 - 输出： | 1000W |
| 电压 - 额定： | 110V |
| 封装/外壳： | NI-1230S |
| 供应商设备封装： | NI-1230S |
| 包装： | 带卷 (TR) |
2
RF Device Data
Freescale Semiconductor
MRF6VP121KHR6 MRF6VP121KHSR6
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 67°C, 1000 W Pulsed, 128
μsec Pulse Width, 10% Duty Cycle,
50 Vdc, IDQ
= 150 mA
Case Temperature 62°C, Mode--S Pulse Train, 80 Pulses of 32
μsec On, 18
μsec
Off, Repeated Every 40 msec, 6.4%
Overall Duty Cycle, 50 Vdc, IDQ
= 150 mA
ZθJC
0.02
0.07
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(3)
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
10
μAdc
Drain--Source Breakdown Voltage
(VGS
=0Vdc,ID
= 165 mA)
V(BR)DSS
110
?
?
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS
=50Vdc,VGS
=0Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 100 Vdc, VGS
=0Vdc)
IDSS
?
?
100
μAdc
On Characteristics
Gate Threshold Voltage
(3)
(VDS
=10Vdc,ID
= 1000
μAdc)
VGS(th)
0.9
1.6
2.4
Vdc
Gate Quiescent Voltage
(4)
(VDD
=50Vdc,ID
= 150 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.2
3
Vdc
Drain--Source On--Voltage
(3)
(VGS
=10Vdc,ID
=2.7Adc)
VDS(on)
?
0.15
?
Vdc
Dynamic Characteristics
(3)
Reverse Transfer Capacitance
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
?
1.27
?
pF
Output Capacitance
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Coss
?
86.7
?
pF
Input Capacitance
(VDS
=50Vdc,VGS
=0Vdc±
30 mV(rms)ac @ 1 MHz)
Ciss
?
539
?
pF
Functional Tests
(4)
(In Freescale Test Fixture, 50 ohm system) VDD
=50Vdc,IDQ
= 150 mA, Pout
= 1000 W Peak (100 W Avg.),
f = 1030 MHz, 128
μsec Pulse Width, 10% Duty Cycle
Power Gain
Gps
19
20
22
dB
Drain Efficiency
ηD
54
56
?
%
Input Return Loss
IRL
?
-- 2 3
-- 9
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Each side of device measured separately.
4. Measurement made with device in push--pull configuration. (continued)
相关PDF资料 |
PDF描述 |
|---|---|
| MRF6VP21KHR6 | MOSFET RF N-CH 1000W NI1230 |
| MRF6VP2600HR6 | MOSFET RF N-CH 600W NI1230 |
| MRF6VP3091NBR1 | MOSFET RF 50V 350MA TO272-4 |
| MRF6VP3450HR6 | MOSFET RF N-CH 450W NI-1230 |
| MRF6VP41KHSR7 | MOSFET RF N-CH 1000W NI1230S |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6VP21KHR5 | 功能描述:射频MOSFET电源晶体管 VHV6 225MHZ 1000W NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP21KHR6 | 功能描述:射频MOSFET电源晶体管 VHV6 225MHZ 1000W NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP21KHR6_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF6VP2600H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF6VP2600HR5 | 功能描述:射频MOSFET电源晶体管 VHV6 600W 225MHZ NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。