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参数资料
| 型号： | MRF6V3090NR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 10/19页 |
| 文件大小： | 942K |
| 描述： | FET RF N-CH 860MHZ 50V TO270-4 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 860MHz |
| 增益： | 22dB |
| 电压 - 测试： | 50V |
| 电流 - 测试： | 350mA |
| 功率 - 输出： | 18W |
| 电压 - 额定： | 110V |
| 封装/外壳： | TO-270AB |
| 供应商设备封装： | TO-270 WB-4 |
| 包装： | 带卷 (TR) |
18
RF Device Data
Freescale Semiconductor, Inc.
MRF6V3090NR1 MRF6V3090NR5
MRF6V3090NBR1 MRF6V3090NBR5
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
?
AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
?
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
?
AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
?
Electromigration MTTF Calculator
?
RF High Power Model
?
.s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the
Software & Tools tab on the part?s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Apr. 2010
?
Initial Release of Data Sheet
1
Dec. 2011
?
Changed ?DVB--T OFDM? to ?DVB--T (8k OFDM)? throughout
?
Fig. 6, CW Output Power versus Input Power: corrected typographical error in dBm to watts conversion
values,p.5
?
Fig. 7, CW Power Gain versus Output Power (Narrowband
Test Circuit): adjusted x--axis scale from 0 to
140 watts to 10 to 150 watts, p. 5
?
Updated Fig. 9, Intermodulation Distortion Products versus Output Power, to correct X--axis PEP power
values,p.6
?
Fig. 10, Intermodulation Distortion Products versus Two--Tone Spacing: added f = 860 MHz to graph
callouts, p. 6
?
Updated Fig. 11, Two--Tone Power Gain versus Output Power, to correct X--axis PEP power values, p. 6
?
Updated Fig. 12, Third Order Intermodulation Distortion versus Output Power, to correct X--axis PEP
power values, p. 6
?
Fig. 18, MTTF versus Junction Temperature -- CW: MTTF end temperature on graph changed to match
maximum operating junction temperature, p. 8
?
Fig. 19, Series Equivalent Source and Load Impedance: removed plot, p. 9
?
Added 470--860 MHz Broadband Reference Circuit frequency table, p. 9
?
Added Fig. 20, 470--860 MHz Broadband 2″×3″Compact Reference Circuit Component Layout, p. 9
?
Added Table 7, 470--860 MHz Broadband 2″×3″Reference Circuit Component Designations and Values,
p. 10
?
Added Fig. 21, Single--Carrier DVB--T (8k OFDM) Power Gain and Drain Efficiency versus Frequency
(Broadband Reference Circuit), p. 11
?
Added Fig. 22, Single--Carrier DVB--T (8k OFDM) Output PAR and IMD Shoulder versus Frequency
(Broadband Reference Circuit), p. 11
?
Added Fig. 23, Pulsed Power Gain and Drain Efficiency versus Output Power (Broadband Reference
Circuit),p.11
相关PDF资料 |
PDF描述 |
|---|---|
| MRF6V4300NR5 | MOSFET RF N-CH 300W TO-270-4 |
| MRF6VP11KHR6 | MOSFET RF N-CH 1000W NI1230 |
| MRF6VP121KHSR6 | MOSFET RF N-CH 50V NI-1230S |
| MRF6VP21KHR6 | MOSFET RF N-CH 1000W NI1230 |
| MRF6VP2600HR6 | MOSFET RF N-CH 600W NI1230 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6V4300NBR1 | 功能描述:射频MOSFET电源晶体管 VHV6 300W TO272WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V4300NBR5 | 功能描述:射频MOSFET电源晶体管 VHV6 300W Latrl N-Ch SE Broadband MOSFET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V4300NBR5-CUT TAPE | 制造商:Freescale 功能描述:MRF6V4300 Series 600 MHz 110 V RF Power N-Channel Mosfet - TO-272-4 |
| MRF6V4300NR1 | 功能描述:射频MOSFET电源晶体管 VHV6 300W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V4300NR1_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
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