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参数资料
| 型号： | MRF6V2010GNR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 13/21页 |
| 文件大小： | 1668K |
| 描述： | MOSFET RF N-CH 10W TO-270-2 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 功率 - 输出： | 10W |
| 封装/外壳： | TO-270AA |
| 供应商设备封装： | TO-270-2 |
| 包装： | 带卷 (TR) |
20
RF Device Data
Freescale Semiconductor
MRF6V2010NR1 MRF6V2010NBR1
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
?
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
?
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
?
Electromigration MTTF Calculator
?
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the Software &
Tools tab on the part?s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Feb. 2007
?
Initial Release of Data Sheet
1
May 2007
?
Corrected Test Circuit Component part numbers in Table 6, Component Designations and Values for C1,
C8, C11, C18, C4, C13, C5, and C14, p. 3
?
Corrected Series Impedance Zsource
and Zload
values, Fig. 13, Series Equivalent Source and Load
Impedance, p. 7
2
Aug. 2007
?
Replaced Case Outline 1265--08 with 1265--09, Issue K, p. 1, 12--14. Corrected cross hatch pattern in
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min--Max .290--.320 to .290 Min; E3 changed from Min--Max .150--.180 to .150 Min). Added JEDEC
Standard Package Number.
?
Replaced Case Outline 1337--03 with 1337--04, p. 1, 15--17. Issue D: Removed Drain--ID label from View
Y--Y on Sheet 2. Renamed E2 to E3. Added cross--hatch region dimensions D2 and E2.
?
Corrected Test Circuit Component part number in Table 6, Component Designations and Values for R1, p. 3
?
Added Figure 12, Power Gain and Drain Efficiency versus CW Output Power, p. 6
?
Corrected plot points to show 50 Ohms in Figure 14,
Series Equivalent Source and Load Impedance, p. 7
?
Added Figures 15--17, Test Circuit Component Layout and Tables 7--9, Test Circuit Component
Designations and Values to show 130, 450 and 64 MHz, respectively, p. 8--10
?
Added Figure 18, Series Equivalent Source and Load Impedance to show 64, 130, 220 and 450 MHz plot
points, p. 11
3
Feb. 2008
?
Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
?
Corrected Ciss
test condition to indicate AC stimulus on the VGS
connection versus the VDS
connection,
Dynamic Characteristics table, p. 2
?
Replaced Case Outline 1337--04, Issue D, with 1337--04, Issue E, p. 15--17. Corrected document number
98ASA99191D on Sheet 3.
4
Mar. 2008
?
Corrected Zsource
(37.5 + j15.1) and Zload
(94.5 + j16.7) 64 MHz values and replotted both, p. 11
?
Added S--Parameter table, p. 12, 13
5
Apr. 2010
?
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
?Continuous use at maximum temperature will affect MTTF? footnote added and changed 200°C to 225°C
in Capable Plastic Package bullet, p. 1
?
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 20
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6V2010N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6V2010N_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6V2010NB | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6V2010NBR1 | 功能描述:射频MOSFET电源晶体管 VHV6 10W TO272-2N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V2010NBR5 | 功能描述:射频MOSFET电源晶体管 VHV6 10W Latrl N-Ch. Broadband MOSFET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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