参数资料
型号: MRF6V12500HR5
厂商: Freescale Semiconductor
文件页数: 6/15页
文件大小: 959K
描述: FET RF N-CH 1.03GHZ 100V NI-780H
标准包装: 1
晶体管类型: LDMOS
频率: 1.03GHz
增益: 19.7dB
电压 - 测试: 50V
电流 - 测试: 200mA
功率 - 输出: 500W
电压 - 额定: 100V
封装/外壳: NI-780
供应商设备封装: NI-780
包装: 标准包装
其它名称: MRF6V12500HR5DKR
14
RF Device Data
Freescale Semiconductor, Inc.
MRF6V12500HR3 MRF6V12500HSR3
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
?
Electromigration MTTF Calculator
?
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the Software
& Tools tab on the part?s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRF6V12500H and MRF6V12500HS parts will be available for 2 years after release of
MRF6V12500H and MRF6V12500HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5
tape and reel option will be offered MRF6V12500H
and MRF6V12500HS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2009
?
Initial Release of Data Sheet
1
Apr. 2010
?
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
?Continuous use at maximum temperature will affect MTTF? footnote added, p. 1
?
Added RF High Power Model availability to Product Software, p. 9
2
Sept. 2010
?
Maximum Ratings table: corrected VDSS
from --0.5, +100 to --0.5, +110 Vdc, p. 2
?
Added 960--1215 MHz Broadband application as follows:
-- Typical Performance, p. 1, 2
-- Fig. 13, Test Circuit Component Layout and Table 6, Test Circuit Component Designations and Values, p. 8
-- Fig. 14, Pulsed Power Gain, Drain Efficiency and IRL versus Frequency, p. 9
-- Fig. 15, Power Gain and Drain Efficiency versus Output Power, p. 9
-- Fig. 16, Series Equivalent Source and Load Impedance, p. 10
3
June 2012
?
Table 3, ESD Protection Characteristics: added the device?s ESD passing level as applicable to each ESD
class, p. 2
?
Modified figure titles and/or graph axes labels to clarify application use, p. 5, 6, 9
?
Fig. 6, Output Power versus Input Power: corrected Pout, Output Power unit of measure to watts, p. 5
?
Fig. 9, Output Power versus Input Power: corrected Pout, Output Power unit of measure to watts, p. 6
?
Fig. 11, MTTF versus Junction Temperature: MTTF
end temperature on graph changed to match maximum
operating junction temperature, p. 6
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MRF6V12500HSR3 功能描述:射频MOSFET电源晶体管 VHV6 500W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V12500HSR5 功能描述:射频MOSFET电源晶体管 VHV6 500W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V13250HR3 功能描述:射频MOSFET电源晶体管 VHV6 250W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V13250HR5 功能描述:射频MOSFET电源晶体管 VHV6 250W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V13250HSR3 功能描述:射频MOSFET电源晶体管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray