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| 型号： | MRF6V12500HR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 7/15页 |
| 文件大小： | 959K |
| 描述： | FET RF N-CH 1.03GHZ 100V NI-780H |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS |
| 频率： | 1.03GHz |
| 增益： | 19.7dB |
| 电压 - 测试： | 50V |
| 电流 - 测试： | 200mA |
| 功率 - 输出： | 500W |
| 电压 - 额定： | 100V |
| 封装/外壳： | NI-780 |
| 供应商设备封装： | NI-780 |
| 包装： | 标准包装 |
| 其它名称： | MRF6V12500HR5DKR |
MRF6V12500HR3 MRF6V12500HSR3
15
RF Device DataDocument Number: MRF6V12500H
Freescale Semiconductor, Inc.Rev. 3, 6/2012
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6V12500HSR3 | 功能描述:射频MOSFET电源晶体管 VHV6 500W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V12500HSR5 | 功能描述:射频MOSFET电源晶体管 VHV6 500W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V13250HR3 | 功能描述:射频MOSFET电源晶体管 VHV6 250W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V13250HR5 | 功能描述:射频MOSFET电源晶体管 VHV6 250W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V13250HSR3 | 功能描述:射频MOSFET电源晶体管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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