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参数资料
| 型号： | MRF6S9125NR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/23页 |
| 文件大小： | 1013K |
| 描述： | MOSFET RF N-CH 28V 27W TO-270-4 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 880MHz |
| 增益： | 20.2dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 950mA |
| 功率 - 输出： | 27W |
| 电压 - 额定： | 68V |
| 封装/外壳： | TO-270AB |
| 供应商设备封装： | TO-270 WB-4 |
| 包装： | 带卷 (TR) |
AR
C
HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
MRF6S9125NR1/NBR1 replaced by MRFE6S9125NR1/NBR1. Refer to Device
Migration PCN12895 for more details.
MRF6S9125NR1 MRF6S9125NBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large-signal, common-source amplifier
applications in 28 volt base station equipment.
N-CDMA Application
?
Typical Single-Carrier N-CDMA Performance: VDD
= 28 Volts, I
DQ
=
950 mA, Pout
= 27 Watt Avg., Full Frequency Band (865-960 MHz), IS-95
CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel
Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain ? 20.2 dB
Drain Efficiency ? 31%
ACPR @ 750 kHz Offset = -47.1 dBc in 30 kHz Bandwidth
GSM EDGE Application
?
Typical GSM EDGE Performance: VDD
= 28 Volts, I
DQ
= 700 mA,
Pout
= 60 Watts Avg., Full Frequency Band (865-960 MHz or
921-960 MHz)
Power Gain ? 20 dB
Drain Efficiency ? 40%
Spectral Regrowth @ 400 kHz Offset = -63 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM ? 1.8% rms
GSM Application
?
Typical GSM Performance: VDD
= 28 Volts, I
DQ
= 700 mA, P
out
=
125 Watts, Full Frequency Band (921-960 MHz)
Power Gain ? 19 dB
Drain Efficiency ? 62%
?
Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 125 Watts
CW Output Power
Features
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Qualified Up to a Maximum of 32 VDD
Operation
?
Integrated ESD Protection
?
225°C Capable Plastic Package
?
N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
?
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
Document Number: MRF6S9125N
Rev. 5, 8/2008
Freescale Semiconductor
Technical Data
MRF6S9125NR1
MRF6S9125NBR1
865-960 MHz, 27 W AVG., 28 V
SINGLE N-CDMA, GSM EDGE
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 1486-03, STYLE 1
TO-270 WB-4
PLASTIC
MRF6S9125NR1
CASE 1484-04, STYLE 1
TO-272 WB-4
PLASTIC
MRF6S9125NBR1
?
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
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相关代理商/技术参数 |
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|---|---|
| MRF6S9125NR1_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S9125NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S9130H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S9130HR3 | 功能描述:MOSFET RF N-CHAN 28V 27W NI-780 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6S9130HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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