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| 型号： | MRF6S9160HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/12页 |
| 文件大小： | 535K |
| 描述： | MOSFET RF N-CHAN 28V 35W NI-780S |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 880MHz |
| 增益： | 20.9dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.2A |
| 功率 - 输出： | 35W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-780S |
| 供应商设备封装： | NI-780S |
| 包装： | 带卷 (TR) |
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HIVE INF
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ARCHIVE INFORMATION
MRF6S9160HR3/HSR3 replaced by MRFE6S9160HR3/HSR3. Refer to Device
Migration PCN12895 for more details.
MRF6S9160HR3 MRF6S9160HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for N-CDMA, GSM and GSM EDGE base station applications
with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier
applications.
?
Typical Single-Carrier N-CDMA Performance @ 880 MHz: VDD
= 28 Volts,
IDQ
= 1200 mA, P
out
= 35 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain ? 20.9 dB
Drain Efficiency ? 30.5%
ACPR @ 750 kHz Offset ? -46.8 dBc in 30 kHz Bandwidth
GSM EDGE Application
?
Typical GSM EDGE Performance: VDD
= 28 Volts, I
DQ
= 1200 mA,
Pout
= 76 Watts Avg., Full Frequency Band (865-895 MHz)
Power Gain ? 20 dB
Drain Efficiency ? 45%
Spectral Regrowth @ 400 kHz Offset = -66 dBc
Spectral Regrowth @ 600 kHz Offset = -75 dBc
EVM ? 2% rms
GSM Application
?
Typical GSM Performance: VDD
= 28 Volts, I
DQ
= 1200 mA, P
out
=
160 Watts, Full Frequency Band (921-960 MHz)
Power Gain ? 20 dB
Drain Efficiency ? 58%
?
Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 160 Watts CW
Output Power
Features
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Qualified Up to a Maximum of 32 VDD
Operation
?
Integrated ESD Protection
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 160 W CW
Case Temperature 73°C, 35 W CW
RθJC
0.31
0.33
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF6S9160H
Rev. 2, 8/2008
Freescale Semiconductor
Technical Data
MRF6S9160HR3
MRF6S9160HSR3
880 MHz, 35 W AVG., 28 V
SINGLE N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465A-06, STYLE 1
NI-780S
MRF6S9160HSR3
CASE 465-06, STYLE 1
NI-780
MRF6S9160HR3
?
Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved.
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